In this study, electron-doped manganese oxide thin films La1−xTexMnO3 (x=0.1,0.15) have been fabricated and their magnetic properties and colossal magnetoresistance effect have been investigated. The experimental results show that the thin films have a high metal–insulator transition temperature TMI of ∼300 K and a large magnetoresistance ratio of ∼80% at 4 T. In addition, the resistivity of thin films has a similar change of an on–off function near room temperature and this change might be advantageous in technological application of La1−xTexMnO3 materials.

Graphene was grown on copper and nickel foils via chemical vapour deposition (CVD), using ethylene (C 2 H 4 ) as a precursor instead of methane (CH 4 ). Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) results confirmed that ethylene can be used in the growth of graphene. The effect of ethylene pressure on graphene growth was also observed. This study's results show that graphene can be grown on copper and nickel foils under the same growth conditions of CVD if ethylene is used as a precursor.

No abstract

No abstract

No abstract