Growth of graphene on copper and nickel foils via chemical vapour deposition using ethylene

Sagar, Rizwan Ur Rehman; Zhang, X.; Xiong, Chengyue

doi:10.1179/1432891714z.000000000771

Cited by 17 publications

(5 citation statements)

References 38 publications

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“…Recently, Peng et al reported positive magnetoresistance (PMR ≈ 180% at 300 K) of multilayer graphene after breaking GF. Magneto-transport properties of GF could be different in comparison to those of graphene sheets due to the presence of different sizes of graphene flakes and more importantly types of connection between these flakes, presence of edge boundaries, geometry of graphene edges, difference in the stacking of graphene layers, and different number of graphene layers. ,, Therefore, graphene morphology has influence on the motion and trajectories of the charge carriers under the applied magnetic field; thus, interesting electro/magneto transport properties can be observed. However, metal electrode deposition on the top of GF is a big challenge for studying electro/magneto transport properties …”

Section: Introductionmentioning

confidence: 99%

Large, Linear, and Tunable Positive Magnetoresistance of Mechanically Stable Graphene Foam–Toward High-Performance Magnetic Field Sensors

Sagar¹,

Galluzzi²,

Wan

et al. 2017

ACS Appl. Mater. Interfaces

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Here, we present the first observation of magneto-transport properties of graphene foam (GF) composed of a few layers in a wide temperature range of 2-300 K. Large room-temperature linear positive magnetoresistance (PMR ≈ 171% at B ≈ 9 T) has been detected. The largest PMR (∼213%) has been achieved at 2 K under a magnetic field of 9 T, which can be tuned by the addition of poly(methyl methacrylate) to the porous structure of the foam. This remarkable magnetoresistance may be the result of quadratic magnetoresistance. The excellent magneto-transport properties of GF open a way toward three-dimensional graphene-based magnetoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Large, Linear, and Tunable Positive Magnetoresistance of Mechanically Stable Graphene Foam–Toward High-Performance Magnetic Field Sensors

Sagar¹,

Galluzzi²,

Wan

et al. 2017

ACS Appl. Mater. Interfaces

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“…Recently, researchers discovered interesting magneto-transport properties of graphene foams since three-dimensional graphene foams exhibit different morphology in contrast with two-dimensional graphene [42]. The magneto-transport properties are related to the size of graphene sheets, connections between graphene sheets, the edge boundaries of graphene sheets, and the layer number of graphene sheets in the graphene foams [95][96][97][98][99]. The trajectories of charge carriers are affected by the morphology of graphene in graphene foams under the presence of external magnetic fields [42].…”

Section: Graphene Foam Mr Systemsmentioning

confidence: 99%

Current Progress of Magnetoresistance Sensors

Yang

Zhang

2021

Chemosensors

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Magnetoresistance (MR) is the variation of a material’s resistivity under the presence of external magnetic fields. Reading heads in hard disk drives (HDDs) are the most common applications of MR sensors. Since the discovery of giant magnetoresistance (GMR) in the 1980s and the application of GMR reading heads in the 1990s, the MR sensors lead to the rapid developments of the HDDs’ storage capacity. Nowadays, MR sensors are employed in magnetic storage, position sensing, current sensing, non-destructive monitoring, and biomedical sensing systems. MR sensors are used to transfer the variation of the target magnetic fields to other signals such as resistance change. This review illustrates the progress of developing nanoconstructed MR materials/structures. Meanwhile, it offers an overview of current trends regarding the applications of MR sensors. In addition, the challenges in designing/developing MR sensors with enhanced performance and cost-efficiency are discussed in this review.

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“…In most cases, Cu or nickel foil is used as the catalyst to fabricate graphene sheets because they have minimal lattice mismatch with graphene and carbon atoms are soluble in the media . Various dry and wet methods have been investigated to achieve large‐scale transfer printing of CVD‐grown graphene films onto target substrates .…”

Section: Vdwe Based On Graphenementioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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to 6.2 eV for AlN, [3] which spans the entire ultraviolet and visible band [4][5][6][7] as well as the near-infrared region. [8,9] Accordingly, III-nitrides have been widely adopted for the fabrication of light-emitting diodes (LEDs), [10][11][12] laser diodes (LDs), [13][14][15] photodetectors (PDs), [16][17][18] and solar cells. [19][20][21] Furthermore, the spontaneous and piezoelectric polarization in wurtzite semiconductors [22][23][24][25] and the high electron drift velocities [26][27][28] can be used to fabricate high electron mobility transistors based on two-dimensional (2D) electron gas (2DEG) in AlGaN/GaN heterostructures. [29][30][31][32] At present, by employing metal organic chemical vapor deposition (MOCVD), [3,[33][34][35] molecular beam epitaxy (MBE), [36][37][38][39] or hydride vapor phase epitaxy (HVPE), [40][41][42] III-nitride films with high crystalline quality can be obtained on c-plane sapphire, [43][44][45] Si (111), [38,[46][47][48] or 6H-SiC [49][50][51] substrates at a high growth temperature, usually above 1000 °C. [52][53][54] However, exfoliating III-nitride films from such single-crystalline substrates proves difficult because of the strong sp 3 -type covalent bonds between the substrates and epilayers. [55] To overcome this problem, thermal release through laser radiation, [56,57] stamp-based printing, [58,59] chemical etching, [60][61][62][63][64][65][66][67] and mechanical exfoliation [54,55,68,69] from singlecrystalline substrates have been investigated. However, there still remain some bottlenecks for future applications, such as damage, limited size, and tedious steps of the flexible production process. [55] Furthermore, flexible amorphous substrates generally cannot tolerate such high growth temperature, [54] and cannot be used for epitaxial growth of single-crystalline films because of the unordered surface atomic arrangement. [70,71] Hence, it is extremely difficult to make allowance for wearable and foldable applications of next-generation (opto)electronic devices based on III-nitrides. [72] On the other hand, sp 2 -bonded 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) exhibit hexagonal in-plane lattice arrangements and weakly bonded layers. [54,73,74] If sp 3 -bonded III-nitride films can somehow be grown on sp 2 -bonded 2D materials, it is theoretically possible to transfer these functional films onto foreign flexible substrates because of the weak van der Waals interactions on both sides of the 2D materials. [68,75,76] In this case, the 2D materials not only act as a buffer layer but also provide a release layer for the mechanical exfoliation of solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet t...

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Growth of graphene on copper and nickel foils via chemical vapour deposition using ethylene

Cited by 17 publications

References 38 publications

Large, Linear, and Tunable Positive Magnetoresistance of Mechanically Stable Graphene Foam–Toward High-Performance Magnetic Field Sensors

Large, Linear, and Tunable Positive Magnetoresistance of Mechanically Stable Graphene Foam–Toward High-Performance Magnetic Field Sensors

Current Progress of Magnetoresistance Sensors

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

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