Stoichiometric single-crystalline TiO2 thin films were grown on SrTi0.99Nb0.01O3 (Nb:STO) substrates by oxygen plasma-assisted molecular beam epitaxy. The Pt∕TiO2∕Nb:STO∕Pt devices showed extremely weak resistance switching hysteresis without applying reverse bias. However, when the reverse bias increased above −2V, the hysteresis became more and more prominent. Further, it was found that the low (high) resistance state can be set by applying sufficient reverse (forward) bias. The origin of the reverse-bias-induced bipolar switching behavior should be attributed to the modulation of Schottky-like barrier width by electrochemical migration of oxygen vacancies.
A rotating cylindrical magnetron consists of a cylindrical tube, functioning as the cathode, which rotates around a stationary magnet assembly. In stationary mode, the cylindrical magnetron behaves similar to a planar magnetron with respect to the influence of reactive gas addition to the plasma. However, the transition from metallic mode to poisoned mode and vice versa depends on the rotation speed. An existing model has been modified to simulate the influence of target rotation on the well known hysteresis behavior during reactive magnetron sputtering. The model shows that the existing poisoning mechanisms, i.e., chemisorption, direct reactive ion implantation and knock on implantation, are insufficient to describe the poisoning behavior of the rotating target. A better description of the process is only possible by including the deposition of sputtered material on the target.
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