Ferroelectric switching and fatigue behavior for PZT/YBCO thin film heterostructures

Lin, He; Wu, N. J.; Xie, Keyu; Li, X. Y.; Ignatiev, A.

doi:10.1080/10584589408017012

Cited by 23 publications

(6 citation statements)

References 12 publications

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“…The polarization of the PZT gate was in the range of 15-25 C/cm 2 . 4 The PZT/YBCO FSPD device structure was then patterned by photolithography and ion milling of the heterostructure. Gold contrast pads were sputtered onto the PZT and YBCO for gate, drain, and source electrodes.…”

Section: Methodsmentioning

confidence: 99%

“…[1][2][3][4][5][6] The lattice and chemical match between ferroelectrics like Pb͑Zr x Ti 1Ϫx )O 3 ͑PZT͒ and high T c superconductors like YBa 2 Cu 3 O 7Ϫx ͑YBCO͒ has made integration possible. 1-2 High quality ferroelectric PZT thin films have already been successfully grown on YBCO substrates and have demonstrated low dielectric loss, low fatigue, and nonvolatile memory behavior.…”

Section: Introductionmentioning

confidence: 99%

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A ferroelectric-superconducting photodetector

Lin

Geiger

et al. 1996

Journal of Applied Physics

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A ferroelectric-superconducting photodetector has been developed and characterized. An atomically ordered PbZrTiO3 (PZT) ferroelectric gate was grown over a c-oriented YBa2Cu3O7−x (YBCO) high Tc superconductor substrate by excimer laser deposition. Irradiation of the PZT gate with photons near the ferroelectric gap energy resulted in a measurable change of the drain-source photocurrent with the device at a temperature near Tc of the YBCO. The critical temperature of the YBCO base was shifted up to 4 K when the PZT gate was irradiated with photon flux of wavelength from 300 to 500 nm. A responsivity of 360 A/W was measured and an upper bound on response time to optical irradiation of 100 ns was determined.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A ferroelectric-superconducting photodetector

Lin

Geiger

et al. 1996

Journal of Applied Physics

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“…Recently, the possibility of integrating HTS with ferroelectric (FE) ceramics has become topical [4,5]. FE thin-films offer a wide range of innovative applications, including the realization of non-volatile random access memories (NVRAMs) [6].…”

Section: Introductionmentioning

confidence: 99%

“…YBCO shows a metallic behaviour at normal temperatures, with a resistivity in the range 50-200 µ cm [7]. Moreover, owing to the drop in YBCO resistivity, a bilayer based on YBCO and PZT displays unique properties below the superconducting transition temperature T c , which can be exploited in reducing NVRAM access times [4]. It is advantageous that both materials can be deposited by pulsed laser ablation and deposition (PLAD) since this technique is the most promising for in-situ fabrication of YBCO/PZT bilayer structures.…”

Section: Introductionmentioning

confidence: 99%

Pulsed laser ablation deposition and characterization of superconductive/ferroelectric bilayers

Ceresara

Iembo

Fuso

et al. 1996

Supercond. Sci. Technol.

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Superconductive/ferroelectric YBCO/PZT bilayer structures have been deposited by pulsed laser ablation on (100) MgO and SrTiO 3 substrates. Before the fabrication of the bilayer, optimization of the YBCO deposition parameters was carried out to improve the electrical, morphological and structural characteristics of the films. The results of x-ray diffraction spectroscopy, resistance versus temperature measurements, atomic force and scanning electron microscopies demonstrate the growth of YBCO films suitable as bottom layers for subsequent PZT deposition. The superconductive/ferroelectric bilayers, as characterized by x-ray diffraction and scanning electron microscopy, demonstrate the presence of the correct lattice structures for both YBCO and PZT layers and a good surface morphology (i.e. the absence of cracks and holes and low droplet density). The ferroelectric capacitors realized by using the YBCO layer and evaporated gold dots as bottom and top electrodes, respectively, exhibit excellent ferroelectric behaviour (remanent polarization P r ≈ 21 µC cm −2 , coercive field E c ≈ 100 kV cm −1 ), suggesting that laser deposited YBCO/PZT bilayers are promising as candidates for the fabrication of non-volatile random access memory devices.

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“…Recent investigations have shown that properties of these ferroelectric thin film capacitors can be evaluated by using illumination of the films in the ultraviolet ͑UV͒ and visible spectral ranges. [2][3][4][5][6][7] In particular, the direction and magnitude of ferroelectric polarization could be estimated by measuring the photocurrent response of the shortcircuited capacitors under pulsed or steady-state illumination. Fast photoresponse to the pulsed laser illumination is especially important for implementation of a nondestructive read out ͑NDRO͒ for future generations of ferroelectric memories.…”

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confidence: 99%