The Joule heating effect on graphene electronic properties is investigated by using full-band Monte Carlo electron dynamics and three-dimensional heat transfer simulations self-consistently.A number of technologically important substrate materials are examined: SiO 2 , SiC, hexagonal BN, and diamond. The results illustrate that the choice of substrate has a major impact via the heat conduction and surface polar phonon scattering. Particularly, it is found that the poor thermal conductivity of SiO 2 leads to significant Joule heating and saturation velocity degradation in graphene (characterized by the so-called 1/ √ n decay). Considering the overall characteristics, BN appears to compare favorably against other substrate choices for graphene in electronic applications.
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