Strong substrate effects of Joule heating in graphene electronics

Li, X.; Kong, Byoung Don; Zavada, J. M.

doi:10.1063/1.3668113

Cited by 24 publications

(23 citation statements)

References 17 publications

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“…This phenomenon (i.e., the negative differential resistance) can be explained, at least in part, by the nonlinear band dispersion at high electron energies as in graphene. 32 The calculation results discussed above demonstrate the intrinsic properties of silicene. When this material is synthesized or placed on a substrate, however, additional scattering sources such as surface polar phonons and impurities must be considered, which could degrade the performance further.…”

Section: A Monolayer Silicenementioning

confidence: 83%

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

et al. 2013

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The electron-phonon interaction and related transport properties are investigated in monolayer silicene and MoS 2 by using a density functional theory calculation combined with a full-band Monte Carlo analysis. In the case of silicene, the results illustrate that the out-of-plane acoustic phonon mode may play the dominant role unlike its close relative, graphene. The small energy of this phonon mode, originating from the weak sp 2 π bonding between Si atoms, contributes to the high scattering rate and significant degradation in electron transport. In MoS 2 , the longitudinal acoustic phonons show the strongest interaction with electrons. The key factor in this material appears to be the Q valleys located between the and K points in the first Brillouin zone as they introduce additional intervalley scattering. The analysis also reveals the potential impact of extrinsic screening by other carriers and/or adjacent materials. Finally, the effective deformation potential constants are extracted for all relevant intrinsic electron-phonon scattering processes in both materials.

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Section: A Monolayer Silicenementioning

confidence: 83%

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

et al. 2013

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“…Recently, many theoretical interests have been attracted to the study of substrate influence on the electronic structure, thermal conductivity and growth mechanisms in bulk graphene [4,5] and graphene nanoribbons [6,7]. Experimentally, the effect of semi-insulating and metal substrates has been investigated by using ultraviolet and far-infrared photoelectron spectroscopy [8,9].…”

mentioning

confidence: 99%

“…Wj, 73.22.Pr,Graphene, an artificial material discovered recently [1], is a promising candidate in future microelectronic devices due to its extraordinary electronic [2] and optical properties [3]. Recently, many theoretical interests have been attracted to the study of substrate influence on the electronic structure, thermal conductivity and growth mechanisms in bulk graphene [4,5] and graphene nanoribbons [6,7]. Experimentally, the effect of semi-insulating and metal substrates has been investigated by using ultraviolet and far-infrared photoelectron spectroscopy [8,9].…”

mentioning

confidence: 99%

Substrate effects on quasiparticles and excitons in graphene nanoflakes

Sheng

Sun

Zhou

et al. 2013

Applied Physics Letters

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The effects of substrate on electronic and optical properties of triangular and hexagonal graphene nanoflakes with armchair edges are investigated by using a configuration interaction approach beyond double excitation scheme. The quasiparticle correction to the energy gap and exciton binding energy are found to be dominated by the long-range Coulomb interactions and exhibit similar dependence on the dielectric constant of the substrate, which leads to a cancellation of their contributions to the optical gap. As a result, the optical gaps are shown to be insensitive to the dielectric environment and unexpectedly close to the single-particle gaps. PACS numbers: 78.67. Wj, 73.22.Pr,Graphene, an artificial material discovered recently [1], is a promising candidate in future microelectronic devices due to its extraordinary electronic [2] and optical properties [3]. Recently, many theoretical interests have been attracted to the study of substrate influence on the electronic structure, thermal conductivity and growth mechanisms in bulk graphene [4,5] and graphene nanoribbons [6,7]. Experimentally, the effect of semi-insulating and metal substrates has been investigated by using ultraviolet and far-infrared photoelectron spectroscopy [8,9].Although bulk graphene has almost zero band-gap, a finite gap can be opened and even engineered by quantum confinement effect in graphene nanoribbons and nanoflakes [10]. Electron-electron interactions would further modify this quasiparticle gap into the optical gap, which is commonly known as the excitonic effect [11][12][13][14]. Many-body perturbation theory and configuration interaction method have been applied to calculate exciton binding energies in quasi-one-dimensional graphene nanoribbons [15,16], and excitonic absorption in triangular graphene quantum dots with zigzag edges [17,18]. Undoubtedly, the study of quasiparticle and excitonic effects in these structures requires a proper treatment of the dielectric screening effect [19] At present, however, there have been very few attempts to investigate substrate effects on electronic structure and optical properties in graphene nanoflakes. In this letter, we will explore how various substrates affects quasiparticle self-energies, exciton binding energies and optical gaps in graphene nanoflakes. An interesting question that how sensitive the optical transitions are to the dielectric environment in nanographene structures, which is believed to have both fundamental and practical importance, will be answered.We consider two types of armchair graphene nanoflakes placed on various substrates such as SiO 2 , diamond, and SiC. Figure 1 gives a schematic view of our first model system, a triangular graphene nanoflake. The number of carbon rings along each edge is set to be N = 4, which corresponds to a total number of atoms n = 60. The single-particle states are obtained by the use of the tight-binding model with the nearest-neighbor hopping. The matrix element of the single-particle Hamiltonian for electron p is given by i|Ĥ(p)|j = t...

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“…10). Therefore, within a continuous theory, the hyperbolic (ballistic-Fourier) equation for heat conductivity describing the variation of the temperature T distribution across graphene-ferroelectric interface can be written as 30…”

Section: Joule Heating Of the Multilayer Graphene-on-substratementioning

confidence: 99%

Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface

Morozovska

Стріха

2013

Journal of Applied Physics

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Using continuous media theory approach we study the static and high-frequency heat dissipation in multi-layer graphene on a ferroelectric. Performed calculations have proved that the pyroelectric effect can modify essentially the free carrier density at the graphene-ferroelectric interface and consequently the conductivity of multi-layer graphene channel. Pyroelectric mechanism can be critical for understanding of the complex thermal and electrical processes taking place across and along graphene-ferroelectric interfaces at terahertz frequencies. V C 2013 AIP Publishing LLC.

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Strong substrate effects of Joule heating in graphene electronics

Cited by 24 publications

References 17 publications

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

Intrinsic electrical transport properties of monolayer silicene and MoS2from first principles

Substrate effects on quasiparticles and excitons in graphene nanoflakes

Pyroelectric origin of the carrier density modulation at graphene-ferroelectric interface

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