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We reported deep-1eve1free band edge luminescence from strained SiGe/Si multiple quantum well structures grown by conventional solid source Si MBE. No-phonon (NP) transitions due to symmetrybreaking alloy disordering in SiGe layers and transverse optical (TO) phonon replicas were clearly identified. A high quality of crystallinity is essential to the efficient luminescence. The choice of a higher growth temperature, Ts=870 °C, beyond the conventional growth temperature window 400-600 °C, was found to be important for radioactive recombination in SiGe/Si QWs structures.