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High-temperature stability of postgrowth-annealed Al-doped MgxZn1-xO films without the phase separation effect J. Vac. Sci. Technol. B 30, 061201 (2012); 10.1116/1.4754813Compositional study of vacuum annealed Al doped ZnO thin films obtained by RF magnetron sputtering Transparent conducting Al-doped ZnO thin films prepared by magnetron sputtering with dc and rf powers applied in combination Aluminum-doped ZnO ͑ZnO:Al, AZO͒ thin films were prepared on glass substrates by dc reactive magnetron sputtering from a Zn-Al alloy target at room temperature. The effects of the Ar-to-O 2 partial pressure ratios on the structural, electrical, and optical properties of AZO films were studied in detail. AZO films grown using 100:4 to 100:8 Ar-to-O 2 ratio result in acceptable quality films with c-axis orientated crystals, uniform grains, 10 −3 ⍀ cm resistivity, greater than 10 20 cm −3 electron concentration, and high transmittance, 90%, in the visible region. The lowest resistivity of 4.11ϫ 10 −3 ⍀ cm was obtained under the Ar-to-O 2 partial pressure ratio of 100:4. A relatively strong UV emission at ϳ3.26 eV was observed in the room-temperature photoluminescence spectrum. X-ray photoelectron spectroscopy analysis confirmed that Al was introduced into ZnO and substitutes for Zn and doped the film n-type.

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Bilayer films consisting of Ga-doped ZnO (GZO) and Cu layers were grown at room temperature by magnetron sputtering. The structural, electrical, and optical properties of GZO/Cu bilayer films were investigated in detail. The crystallinity and transparent-conductive properties of the films were correlated with the Cu layer thickness. The GZO/Cu bilayer film with the Cu layer thickness of 7.8 nm exhibited a low resistivity of 7.6×10−5 Ω cm and an average visible transmittance of 74%. The reflectance was up to 65% in the near-infrared region for this film. The transparent conductive and near-infrared reflective GZO/Cu bilayer films could be readily deposited at room temperature. The GZO/Cu bilayer films were thermally stable when annealed at temperatures as high as 500 °C.