Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature

Bie, X.; Lü, Jianguo; Gong, Li; Li, Lin; Zhao, Binghui; Ye, Z.Z.

doi:10.1016/j.apsusc.2009.08.018

Cited by 47 publications

(30 citation statements)

References 21 publications

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“…1, inset). Also, the defects such as dislocations, interstitials, vacancies, and Ga substitution induce the scattering of carriers and act as traps making carriers inactive [43].…”

Section: Characterization Of Ga 2 O 3 -Zno Nanohybridsmentioning

confidence: 99%

Gallia–ZnO nanohybrid sensors with dramatically higher sensitivity to ethanol in presence of CO, methane and VOCs

Bagheri

Khodadadi

Mahjoub

et al. 2016

Sensors and Actuators B: Chemical

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“…1, inset). Also, the defects such as dislocations, interstitials, vacancies, and Ga substitution induce the scattering of carriers and act as traps making carriers inactive [43].…”

Section: Characterization Of Ga 2 O 3 -Zno Nanohybridsmentioning

confidence: 99%

Gallia–ZnO nanohybrid sensors with dramatically higher sensitivity to ethanol in presence of CO, methane and VOCs

Bagheri

Khodadadi

Mahjoub

et al. 2016

Sensors and Actuators B: Chemical

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“…Among these elements, Ga and Al have been extensively used as n-type dopants. In particular, Ga-doped ZnO (GZO) films have several merits such as higher resistance to oxidation and less lattice deformation compared to Al-doped ZnO (AZO) films [1,2].…”

Section: Introductionmentioning

confidence: 99%

Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates

Kim

Roh

Lee

et al. 2011

Journal of Crystal Growth

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“…On the other hand, further increase of energy in the case of higher growth temperature over 400°C could result in the breaking of the bonding of Zn-O and re-evaporation of the deposited films rather than enabling the atoms to move to their stable sites [12,24], so as to decrease the orientation factor of (002) direction. Zhang et al [25] and Zhong et al [22] reported similar result in researching the influence of growth temperature on the structural properties of Al-doped ZnO thin films.…”

Section: Thin Films Characterizationmentioning

confidence: 99%

“…25. Bie et al [12] studied the physical properties of GZO films prepared by DC reactive magnetron sputtering. They found that the substrate temperature have an important impact on the properties of GZO thin films.…”

Section: Introductionmentioning

confidence: 99%

“…Besides high conductivity and optical transmittance in the visible region, the GZO thin films have a lot of advantages, such as low cost, non-toxicity, material abundance and high stability under hydrogen plasma, compared to ITO thin films. For the preparation of GZO thin films, there are many deposition techniques currently in use, for instance, RF magnetron sputtering [9][10][11], DC magnetron sputtering [12], spray pyrolysis [13], pulsed laser deposition [14], sol-gel process [15] and atomic * E-mail: jhgalpha@163.com layer deposition [16]. Up to now, many research groups have reported the effect of deposition conditions on the properties of GZO thin films prepared by different methods.…”

Section: Introductionmentioning

confidence: 99%

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Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

Long

et al. 2015

Materials Science-Poland

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Highly conductive gallium-doped zinc oxide (GZO) transparent thin films were deposited on glass substrates by RF magnetron sputtering. The deposited films were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), four-point probe and UV-Vis spectrophotometer, respectively. The effect of growth temperature on the structure and optoelectrical properties of the films was investigated. The results demonstrate that high quality GZO films oriented with their crystallographic c-axis perpendicular to the substrates are obtained. The structure and optoelectrical properties of the films are highly dependent on the growth temperature. It is found that with increasing growth temperature, the average visible transmittance of the deposited films is enhanced and the residual stress in the thin films is obviously relaxed. The GZO films deposited at the growth temperature of 400°C, which have the largest grain size (74.3 nm), the lowest electrical resistivity (1.31 × 10 −3 Ω·cm) and the maximum figure of merit (1.46 × 10 −2 Ω −1 ), exhibit the best optoelectrical properties. Furthermore, the optical properties of the deposited films were determined by the optical characterization methods and the optical energy-gaps were evaluated by extrapolation method. A blue shift of the optical energy gap is observed with an increase in the growth temperature.

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Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature

Cited by 47 publications

References 21 publications

Gallia–ZnO nanohybrid sensors with dramatically higher sensitivity to ethanol in presence of CO, methane and VOCs

Gallia–ZnO nanohybrid sensors with dramatically higher sensitivity to ethanol in presence of CO, methane and VOCs

Growth and electrical properties of nonpolar and polar Ga-doped ZnO thin films on LaAlO3 and SrTiO3 substrates

Preparation, structure and optical properties of transparent conducting gallium-doped zinc oxide thin films

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