This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used SF 6 and O 2 gases in the HCP dry etch process. This paper demonstrates very high plasma density of 2?10 12 cm -3 at a discharge current of 20 mA. Silicon etch rate of 1.3 ? m/min was achieved with SF 6 /O 2 plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 sccm, and RF power of 200 W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ? m without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.
This paper deals with a novel structure of polycrystalline silicon (poly-Si) solar cell for terrestrial applications. Grain boundary (GB) in poly-Si degrades a conversion efficiency of poly-Si solar cell. To reduce the GB side-effect, we investigated various parameters such as the preferential GB etch, etchtime, ITO electrode, heat treatment, and emitter layer effect. Among various preferential etchants such as Sirtl, Yang, Secco, and Schimmel, a Schimmel etchant illustrated an excellent preferential etching property. We observed a 10μm deep trench along grain boundaries and randomly textured grain surface with pyramid structure. We used rf magnetron sputter grown tin doped indium oxide (ITO) film as a top contact metal. ITO films showed a resistivity of 1.14 ×10-4 Ω-cm and transmittance of 90.5% for the wavelength of 594 nm. ITO films served as a top electrode as well as an effective AR coating layer. ITO film properties were strongly influenced by the preparation temperatures. Substrate temperature of 400oC gave the highest conversion efficiency of poly-Si solar cell. With well-fabricated poly-Si solar cells, we were able to achieve conversion efficiency as high as 16% at the input power of 20 mW/cm2.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.