Transition metal oxide TFTs were fabricated on a fabric substrate for wearable display. Atomic layer deposition (ALD) was employed to reduce process temperature. The gate electrode (Ti/Al/Ti) was deposited by thermal evaporation. The gate insulator and channel layer were Al 2 O 3 and ZnO, respectively. Ti/Al was deposited by thermal evaporation to make the source and drain contacts for ZnO TFTs. The TFT fabricated on the fabric substrate showed TFT driving behavior with the following performances: μ FE = 0. 6 cm 2 /V-s, on off ratio = 9.07 10 2 , Subthreshold Swing = 1.725 decade -1 , V th = -1.57 V. The results confirmed that it may be feasible to apply our low temperature fabrication of TFTs using the ALD process to wearable displays based on fabric substrates.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.