Suppressed Instability of a-IGZO Thin-Film Transistors Under Negative Bias Illumination Stress Using the Distributed Bragg Reflectors

Kim, Eungtaek; Jang, Woo Jae; Kim, Woohyun; Park, Junhong; Lee, Myung Keun; Park, Sang‐Hee Ko; Choi, Kyung Cheol

doi:10.1109/ted.2015.2513414

Cited by 20 publications

(16 citation statements)

References 30 publications

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“…Thus, the electrical reliability of the TFTs fabricated with different PN/O is also evaluated by negative-bias-stress illumination (NBSI). Figure 4a [19,20]. Meanwhile, as shown in Figure 4a-b, it is clear that the negative shift of Vth is decreased from 3.0 V to 1.1 V for N-free a-IGZO TFT and 20% PN/O a-IGZO TFT after 5000 s NBSI, which means that the a-IGZO/SiO2 interface quality is improved by N-doping.…”

Section: Resultsmentioning

confidence: 79%

“…Thus, the electrical reliability of the TFTs fabricated with different P N/O is also evaluated by negative-bias-stress illumination (NBSI). Figure 4a-c show the transfer curves of the a-IGZO TFTs fabricated with different P N/O against NBS time under white light illumination, in which the device is stressed at V GS = −15 V for 5000 s. The transfer curves of the TFTs exhibit a shift toward negative gate voltage direction with no apparent change in SS and µ FE after the NBSI condition, which indicates that the negative shift of V th should be determined by photo-induced holes trapped into the a-IGZO/SiO 2 interface [19,20]. Meanwhile, as shown in Figure 4a,b, it is clear that the negative shift of V th is decreased from 3.0 V to 1.1 V for N-free a-IGZO TFT and 20% P N/O a-IGZO TFT after 5000 s NBSI, which means that the a-IGZO/SiO 2 interface quality is improved by N-doping.…”

Section: Resultsmentioning

confidence: 99%

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Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs

Huang

Zhou

2019

Applied Sciences

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The electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) deposited with different N2/O2 partial pressure ratios (PN/O) are investigated. It is found that the device with 20% PN/O exhibits enhanced electrical stability after positive-bias-stress temperature (PBST) and negative-bias-stress illumination (NBSI), presenting decreased threshold voltage drift (ΔVth). Compared to the N-free TFT, the average effective interface barrier energy (Eτ) of the TFT with 20% PN/O is increased from 0.37 eV to 0.57 eV during the bias-stress process, which agrees with the suppressed ΔVth from 3.0 V to 1.12 V after the PBS at T = 70 °C. X-ray photoelectron spectroscopy analysis revealed that the enhanced stability of the a-IGZO TFT with 20% PN/O should be ascribed to the control of oxygen vacancy defects at the interfacial region.

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Section: Resultsmentioning

confidence: 79%

Section: Resultsmentioning

confidence: 99%

Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs

Huang

Zhou

2019

Applied Sciences

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“…Furthermore, the transmittance spectra of a-IGMO films grown on vitreous quartz substrate were measured as shown in Figure 2 b. All the samples exhibited high transmittances of approximately 90% in visible spectra, clearly larger than the previously-reported a-IGZO films, whose visible spectral transmittances are approximately 80% [ 16 , 17 , 18 ]. This has demonstrated the possibility of our proposed a-IGMO photo-TFTs for enlarging the aperture ratio of the sensor pixel.…”

Section: Resultsmentioning

confidence: 88%

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

Zhang

Qian

et al. 2017

Materials

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Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for each sensor pixel. In this work, the ultraviolet photo thin-film transistor based on amorphous InGaMgO, which processes a larger bandgap and higher transmission compared to amorphous InGaZnO, was proposed and investigated. Furthermore, the effects of post-deposition annealing in oxygen on both the material and ultraviolet detection characteristics of amorphous InGaMgO were also comprehensively studied. It was found that oxygen post-deposition annealing can effectively reduce oxygen vacancies, leading to an optimized device performance, including lower dark current, higher sensitivity, and larger responsivity. We attributed it to the combined effect of the reduction in donor states and recombination centers, both of which are related to oxygen vacancies. As a result, the 240-min annealed device exhibited the lowest dark current of 1.7 × 10−10 A, the highest photosensitivity of 3.9 × 106, and the largest responsivity of 1.5 × 104 A/W. Therefore, our findings have revealed that amorphous InGaMgO photo thin-film transistors are a very promising alternative for UV detection, especially for application in touch-free interactive displays.

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“…In this regard, in situ X-ray tomography is an excellent characterization platform in comparison to previous studies that are primarily based on postmortem analysis. In situ X-ray tomography has recently been widely utilized to investigate the mechanical behavior of a variety of synthetic structural materials [18,19], including cellular solids. However, few studies have used in situ X-ray tomography to investigate the deformation and fracture mechanisms of biological cellular structures, particularly echinoderm porous skeletons.…”

Section: Introductionmentioning

confidence: 99%

“…In the past few years, several studies have attempted to identify damage using computer vision approaches to replace the slow and subjective manual inspection procedures for fast and reliable defect analysis. Many computer vision algorithms have been proposed, including thresholding [18,19], segmentation [20], edge detector [21,22], and filter-based algorithms [23]. These have been used to detect damage on pavement surfaces [20][21][22][23][24][25], bridge surfaces [26], wood samples [27,28], and steel [29].…”

Section: Introductionmentioning

confidence: 99%

Automatic Crack Detection and Analysis for Biological Cellular Materials in X-Ray In Situ Tomography Measurements

Yang

Deng

et al. 2019

Integr Mater Manuf Innov

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We introduce a novel methodology, based on in situ X-ray tomography measurements, to quantify and analyze 3D crack morphologies in biological cellular materials during damage process. Damage characterization in cellular materials is challenging due to the difficulty of identifying and registering cracks from the complicated 3D network structure. In this paper, we develop a pipeline of computer vision algorithms to extract crack patterns from a large volumetric dataset of in situ X-ray tomography measurement obtained during a compression test. Based on a hybrid approach using both model-based feature filtering and data-driven machine learning, the proposed method shows high efficiency and accuracy in identifying the crack pattern from the complex cellular structures and tomography reconstruction artifacts. The identified cracks are registered as 3D tilted planes, where 3D morphology descriptors including crack location, crack opening width, and crack plane orientation are registered to provide quantitative data for future mechanical analysis. This method is applied to two different biological materials with different levels of porosity, i.e., sea urchin (Heterocentrotus mamillatus) spines and emu (Dromaius novaehollandiae) eggshells. The results are verified by experienced human image readers. The methodology presented in this paper can be utilized for crack analysis in many other cellular solids, including both synthetic and natural materials.

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Suppressed Instability of a-IGZO Thin-Film Transistors Under Negative Bias Illumination Stress Using the Distributed Bragg Reflectors

Cited by 20 publications

References 30 publications

Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs

Influence of N2/O2 Partial Pressure Ratio during Channel Layer Deposition on the Temperature and Light Stability of a-InGaZnO TFTs

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

Automatic Crack Detection and Analysis for Biological Cellular Materials in X-Ray In Situ Tomography Measurements

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