Rearrangement of the W(0) d6 ^-alkyne complex /ac-(dppe)(OC)3W(j/2-PhC=CH) (dppe = Ph2PCH2CH2PPh2) yields a meridional tricarbonyl tungsten vinylidene complex, zner-(dppe) (OC)3W=C=CHPh, which provides an M-C-C framework for further ligand-based transformations. Electrophilic addition at the 0-carbon of the vinylidene ligand generates a cationic tungsten carbyne, [wr-(dppe)(OC)3W5=CCH2Ph] [BF4]. This carbyne cation undergoes carbon monoxide substitution
Vacuum deposition of AgBr on thin silicon dioxide films prepared on silicon substrates was shown to provide stable, rapid-response potentiometric sensors for component-ion activities. Limiting high dc impedances from impedancefrequency responses and external charge-activity measurements indicate displacement current (field-effect) as the probable cause for electrochemical responses. Implications of the mechanism (invoking Volta potential arguments) on the processes of potential generation and potential communication to underlying semiconductor substrates in ISFETs and CHEMFETs are analyzed dlagrammatlcally and theoretically. The essential role of reference electrodes is strongly Indicated.Ion selective field effect transistors (ISFETs), introduced by Bergveld (1, 2) have been the subject of both theoretical (3) and practical studies (4-6). The concept has also been generalized to include sensors for uncharged chemical species
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