We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality-factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geometries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple "bright" dipole modes to "dark" dipole modes whose radiative decay is suppressed by local field effects in the array. Our approach is widely scalable from the near-infrared to radio frequencies. We first unravel the Fano resonance behavior through numerical simulations of a germanium resonator-based metasurface that achieves a quality-factor of ~1300 at ~10.8 µm. Then, we present two experimental demonstrations operating in the near-infrared (~1 µm): a silicon-based implementation that achieves a quality-factor of ~350; and a gallium arsenide-based structure that achieves a quality-factor of ~600 -the highest near-infrared quality-factor experimentally demonstrated to date with this kind of metasurfaces. Importantly, large electromagnetic field enhancements appear within the resonators at the Fano resonant frequencies. We envision that combining high quality-factor, high field enhancement resonances with nonlinear and active/gain materials such as gallium arsenide will lead to new classes of active optical devices.Metasurfaces are currently the subject of intensive research worldwide since they can be tailored to produce a wide range of optical behaviors. However, metasurfaces generally exhibit broad spectral resonances, and it is difficult to obtain narrow (i.e. high quality-factor, Q) spectral features. Attaining such high-Q features from metasurfaces would greatly expand their application space, particularly in the areas of sensing, spectral filtering, and optical modulation. Early metasurfaces were fabricated from metals and exhibited particularly broad resonances at infrared and optical frequencies as a result of Ohmic losses. Dielectric resonator-based metasurfaces were introduced to overcome these losses and have enabled, among others, wave-front manipulation and cloaking devices, perfect reflectors, and ultrathin lenses [1-10] but, although absorptive losses were reduced, the metasurface resonances remained broad due to strong coupling with the external field (i.e. large radiation losses).Recently, new strategies based on "electromagnetically induced transparency" or "Fano resonances" have been developed that show great promise for achieving high-Q resonances [11][12][13][14][15]. In this approach, the resonator system is designed to support both "bright" and "dark" resonances. The incident optical field readily couples to the bright resonance, but cannot couple directly to the dark resonance. Through proper design, a weak coupling between the two resonances can be introduced, allowing energy from the incident wave to be indirectly coupled to the dark resonance. The metasurface transmission and reflection spectra resulting from ...

Pulsed power accelerators compress electrical energy in space and time to provide versatile experimental platforms for high energy density and inertial confinement fusion science. The 80-TW “Z” pulsed power facility at Sandia National Laboratories is the largest pulsed power device in the world today. Z discharges up to 22 MJ of energy stored in its capacitor banks into a current pulse that rises in 100 ns and peaks at a current as high as 30 MA in low-inductance cylindrical targets. Considerable progress has been made over the past 15 years in the use of pulsed power as a precision scientific tool. This paper reviews developments at Sandia in inertial confinement fusion, dynamic materials science, x-ray radiation science, and pulsed power engineering, with an emphasis on progress since a previous review of research on Z in Physics of Plasmas in 2005.

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We demonstrate metamaterials at the mid-infrared (mid-IR) wavelengths (8–12 μm) that can be widely tuned by doping in adjacent semiconductor epilayers. The metamaterials are based on metallic split ring resonators (SRRs) fabricated on doped indium antimonide (InSb). Finite integral time-domain simulation results and measured transmission data show that the resonance blueshifts when the semiconductor electron carrier concentration is increased while keeping the split ring geometry constant. A resonant wavelength shift of 1.15 μm is achieved by varying the carrier concentration of underlying InSb epilayer from 1×1016 to 2×1018 cm−3. This work represents the first step toward active tunable metamaterials in the mid-IR where the resonance can be tuned in real time by applying an electric bias voltage to control the effective carrier density.