We report electronics regime (GHz) two-dimensional (2D) plasmonic circuits, which locally and nonresonantly interface with electronics, and thus offer to electronics the benefits of their ultrasubwavelength confinement, with up to 440,000-fold mode-area reduction. By shaping the geometry of 2D plasmonic media 80 nm beneath an unpatterned metallic gate, plasmons are routed freely into various types of reflections and interferences, leading to a range of plasmonic circuits, e.g., plasmonic crystals and plasmonic-electromagnetic interferometers, offering new avenues for electronics.

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Abstract-In this paper, we introduce a novel standing wave oscillator (SWO) utilizing standing-wave-adaptive tapered transmission lines. This structure enhances and lowers phase noise through loss-reducing shaping of the transmission line, such that it is adapted to the position-dependent amplitudes of standing waves. Measurements validate the advantages of the proposed technique. The phase noise of a MOS SWO with the tapered line is 5-10 dB less than that of a uniform-line MOS SWO over a wide range of offset frequencies, centered about 15 GHz. Demonstrating a valuable exploitation of standing wave properties, the novel design concept boosts the potential for the emergence of standing wave oscillators as a useful alternative to the traditional lumped oscillator.

We report an on-chip solid-state Mach-Zehnder interferometer operating on two-dimensional (2D) plasmonic waves at microwave frequencies. Two plasmonic paths are defined with GaAs/AlGaAs 2D electron gas 80 nm below a metallic gate. The gated 2D plasmonic waves achieve a velocity of ~c/300 (c: free-space light speed). Due to this ultra-subwavelength confinement, the resolution of the 2D plasmonic interferometer is two orders of magnitude higher than that of its electromagnetic counterpart at a given frequency. This GHz proof-of-concept at cryogenic temperatures can be scaled to the THz~IR range for room temperature operation, while maintaining the benefits of the ultra-subwavelength confinement.Plasmas appear in various forms in nature, with the collective electron density waves, or plasmonic waves, serving as a salient dynamic feature. Solid-state plasmas consisting of mobile electrons in metals and semiconductors are especially interesting, from the point of view that fabrication technologies available for solid-state materials allow us to design the boundaries and interfaces of the plasma media in order to engineer the plasmonic waves. In particular, surface plasmons on three-dimensional (3D) bulk metals have been an active subject of research in photonics. One of these efforts with surface plasmons concerns developing interferometers 1-4 . A prominent advantage of surface plasmonic interferometers is their high resolution. Surface plasmons can achieve a velocity as low as ~ c/10 with a proportionally reduced wavelength 5 .

Spatial resistivity distribution of transparent conducting impurity-doped ZnO thin films deposited on substrates by dc magnetron sputtering J. Vac. Sci. Technol. A 28, 842 (2010); 10.1116/1.3357284 P-doped p -type ZnO films deposited on Si substrate by radio-frequency magnetron sputtering Appl. Phys. Lett. 88, 152102 (2006); 10.1063/1.2193798Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputteringThe authors demonstrate 1.6 GHz surface acoustic wave ͑SAW͒ generation using interdigital transducers patterned by e-beam lithography on a thin ZnO piezoelectric film deposited on an InP substrate. The highly oriented, dense, and fine-grain ZnO film with high resistivity was deposited by radio frequency magnetron sputtering and was characterized by x-ray diffraction, scanning electron microscopy, atomic force microscopy, and a four-point probe station. The acoustic wavelength of the 1.6 GHz SAW generated by exciting the interdigital transducer on ZnO / InP with a microwave signal is 1.6 m. This SAW filter device could be monolithically integrated with optoelectronic devices, opening new opportunities to use SAWs for applications such as gigahertz-frequency filters on optoelectronic devices and novel widely tunable quantum cascade lasers.