Implanted ohmic contacts were made on molecular beam epitaxy grown GaN materials. Si was implanted at a doping density of about 4×1020 cm-3 to decrease the contact resistance of the contact, followed by an activation anneal at 1150 °C for 30 s. The overlay metal Ti/Au was evaporated. Four-probe measurements were performed on transmission line model patterns. The measured maximum contact resistance was 0.097 Ω mm and the apparent specific contact resistance was 3.6×10−8 Ω cm2.
In this paper the H‐integral equation is investigated for the problem of plane‐wave diffraction by a thin plate. It is found that the limiting form of the H‐equation by itself is not complete unless the condition
is simultaneously enforced. By suitably combining the above‐mentioned equations, a new set of equations is derived for the two components of the surface current distribution on the plate. Several advantageous features of the new equations are pointed out, and numerical results based upon the use of these equations are presented for the thin‐strip and the square‐plate problems.
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