Reliability of DC-DC converters is important in photovoltaic (PV) applications like building integrated PV systems, where the module-level converter may be stressed significantly. Understanding and predicting the most failing components with accurate degradation models in such systems enables the design for reliability. In this paper, a photovoltaic mission profile-based reliability analysis framework is proposed where the inputs and models of the framework can be adjusted according to the converter topology, the components and the failure mechanisms under investigation. The framework is demonstrated by comparing the influence of two different one-year mission profiles on the solder joint degradation of a MOSFET in an interleaved boost converter. This is done by using an electro-thermal circuit simulation in PLECS and a finite element MOSFET model in COMSOL. In future work, the mesh and the geometry of the solder joint can be adjusted to more closely match the practical stress-cycle (S-N) curve used to determine the lifetime. This framework allows for exploring more accurate models or even simplify parts with low sensitivity in order to obtain a thorough understanding of their accuracy and to determine the overall converter reliability.

European legislation on building performance and energy efficiency pushes the shift towards minimizing the environmental footprint of buildings. Buildingintegrated photovoltaics (BIPV) is a promising technology that can accelerate the transition to energy-neutral buildings. Quantifying the potential of BIPV is crucial and one means of obtaining those results is through simulation. The state-of-the-art tools offer either thermal or electrical specialization; in particular, balance of system components (BOS) such as power converters have not been studied in detail within the building simulations BIPV domain. In this paper, a multi-physics model of a BIPV integrated DC/DC converter is developed in the Modelica language, taking into account the thermal and electrical couplings inherent to power electronic systems. The model has been validated using representative outdoor BIPV measurements and a DC/DC converter prototype. It has been found that the proposed model provides reasonable accuracy and outperforms an equivalent power conditioning model in TRNSYS. To demonstrate the model's functionality, two case studies are performed. First, the temperature-dependence of the converter's efficiency and losses is quantified and analyzed and, second, the prominent contributors to the converter losses are identified and discussed.

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Building-Integrated Photovoltaics (BIPV) replace traditional building elements with power generating elements through the use of solar cells. One of the targets for this technology is to place the module-level power converter into the photovoltaic module's frame to achieve an integrated system. Temperature is the most influential parameter for a converter's reliability, its damage caused on the components needs to be studied in detail. In this paper, a reliability comparison based on a four-day mission profile has been made in order to assess the most reliable frame position for this converter to be placed in as all of them possess a different temperature profile. The results show that placing the converter in the lateral bottom of the frame is significantly more reliable than the mid or top position. In addition, a lifetime analysis is performed on the converter's dc-link capacitor in order to demonstrate the required methodology. In future work, this can be extended towards other sensitive components when appropriate lifetime models become available. These lifetime estimations can then be combined to achieve an overall BIPV system lifetime assessment.

State-of-the-art reliability assessment typically starts from a given circuit topology, for which the most suitable components are selected using a Physics of Failure analysis. This paper, however, addresses the topology selection stage, which is the foundation in designing reliable converters. Based on an overview of the reliability performance of different components, a methodology is presented as a guideline for comparing topologies to one another. The focus is directed at practical consequences associated with certain designs. Furthermore, an overview is provided on the latest developments in component technology reliability improvements. The developed methodology is mainly intended for demanding applications, where long lifetimes are required or elevated ambient temperatures are present. After the topology selection, an overview of possibilities is given that allows further increasing converter availability. Finally, the methodology is applied to the design of module level converters for building integrated photovoltaics, which is a high temperature application with a high desired lifetime. A prototype and experimental results are presented.

The operational expenditures of solar energy are gaining attention because of the continuous decrease of the capital expenditures. This creates a demand for more reliable systems to further decrease the costs. Increased reliability is often ensured by iterative use of design for reliability. The number of iterations that can take place strongly depends on the computational efficiency of this methodology. The main research objective is to quantify the influence of the temperature dependence of the electrical variables used in the electro-thermal model on the reliability and the computation time. The influence on the reliability is evaluated by using a 2-D finite elements method model of the MOSFET and calculating the plastic energy dissipation density in the die-attach and the bond wire. The trade-off between computation time of the electro-thermal model in PLECS (4.3, Plexim, Zurich, Switzerland) and generated plastic energy accuracy obtained in COMSOL (5.3, COMSOL Inc., Burlington, MA, USA) is reported when excluding a certain temperature dependence. The results indicate that the temperature dependence of the input and output capacitors causes no change in the plastic energy dissipated in the MOSFET but does introduce the largest increase in computation time. However, not including the temperature dependence of the MOSFET itself generates the largest difference in plastic energy of 10% as the losses in the die are underestimated.

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