Moiré superlattices are emerging as a new route for engineering strongly correlated electronic states in two-dimensional van der Waals heterostructures, as recently demonstrated in the correlated insulating and superconducting states in magic-angle twisted bilayer graphene and ABC trilayer graphene/boron nitride moiré superlattices 1-4 . Transition metal dichalcogenide (TMDC) moiré heterostructures provide another exciting model system to explore correlated quantum phenomena 5 , with the addition of strong light-matter interactions and large spin-orbital coupling. Here we report the optical detection of strongly correlated phases in semiconducting WSe2/WS2 moiré superlattices. Our sensitive optical detection technique reveals a Mott insulator state at one hole per superlattice site (ν = 1), and surprising insulating phases at fractional filling factors ν = 1/3 and 2/3, which we assign to generalized Wigner crystallization on an underlying lattice 6-9 . Furthermore, the unique spin-valley optical selection rules 10-12 of TMDC heterostructures allow us to optically create and investigate low-energy spin excited states in the Mott insulator. We reveal an especially slow spin relaxation lifetime of many microseconds in the Mott insulating state, orders-of-magnitude longer than that of charge excitations. Our studies highlight novel correlated physics that can emerge in moiré superlattices beyond graphene.

No abstract

No abstract

Conventional metasurface holograms relying on metal antennas for phase manipulation suffer from strong Ohmic loss and incomplete polarization conversion. The efficiency is limited to rather small values when operating in transmission mode. Here, we implement a high-efficiency transmissive metasurface hologram by leveraging the recently developed Huygens’ metasurface to construct an electric and magnetic sheet with a transmission efficiency up to 86% and optical efficiency of 23.6%. The high-efficiency originates from the simultaneous excitations of the Mie-type electric and magnetic dipole resonances in the meta-atoms composed of silicon nanodisks. Our hologram shows high fidelity over a wide spectral range and promises to be an outstanding alternative for display applications.

Due to their low dimensionality, two-dimensional semiconductors, such as monolayer molybdenum disulfide, have a range of properties that make them valuable in the development of nanoelectronics. For example, the electronic bandgap of these semiconductors is not an intrinsic physical parameter and can be engineered through the dielectric environment around the monolayer. Here we show that this dielectric dependent electronic bandgap can be used to engineer a lateral heterojunction within a homogeneous MoS 2 monolayer. We visualize the heterostructure with Kelvin probe force microscopy and examine its influence on electrical transport experimentally and theoretically. We observe a lateral heterojunction with ~90 meV band offset due to different bandgap renormalization of monolayer MoS 2 when it is on a substrate in which one segment is made from an amorphous fluoropolymer (Cytop) and another segment from hexagonal boron nitride. This heterostructure leads to a diode-like electrical transport with a strong asymmetric behaviour.

In this Letter, we demonstrate theoretically a full-color hologram using spatial multiplexing of dielectric metasurface for three primary colors, capable of reconstructing arbitrary RGB images. The discrete phase maps for the red, green, and blue components of the target image are extracted through a classical Gerchberg-Saxton algorithm and reside in the corresponding subcells of each pixel. Silicon nanobars supporting narrow spectral response at the wavelengths of the three primary colors are employed as the basic meta-atoms to imprint the Pancharatnam-Berry phase while maintaining minimum crosstalk between different colors. The reconstructed holographic images agree well with the target images making it promising for colorful display.

The layer stacking order has profound effects on the physical properties of two-dimensional van der Waals heterostructures. For example, graphene multilayers can have distinct electronic band structures and exhibit completely different behaviors depending on the stacking order. Fascinating physical phenomena, such as correlated insulators, superconductors, and ferromagnetism, can also emerge with a periodic variation of the layer stacking order, which is known as the moiré superlattice in van der Waals materials. In this work, we realize the global phase transition between different graphene layer stacking orders and elucidate its microscopic origin. We experimentally determine the energy difference between different stacking orders with the accuracy of μeV/atom. We reveal that both the carrier doping and the electric field can drive the layer-stacking phase transition through different mechanisms: carrier doping can change the energy difference because of a non-negligible work function difference between different stacking orders; the electric field, on the other hand, induces a band-gap opening in ABC-stacked graphene and hence changes the energy difference. Our findings provide a fundamental understanding of the electrically driven stacking-order phase transition in few-layer graphene and demonstrate a reversible and noninvasive method to globally control the stacking order.

Two-dimensional surface polaritons (2DSPs), such as graphene plasmons, exhibit various unusual properties, including electrical tunability and strong spatial confinement with high Q-factor, which can enable tunable photonic devices for deep subwavelength light manipulations. Reflection of plasmons at the graphene's edge plays a critical role in the manipulation of 2DSP and enables their direct visualization in near-field infrared microscopy. However, a quantitative understanding of the edge-reflections, including reflection phases and diffraction effects, has remained elusive. Here, we show theoretically and experimentally that edge-reflection of 2DSP exhibits unusual behaviors due to the presence of the evanescent waves, including an anomalous Goos-Hänchen phase shift as in total internal reflections and an unexpected even-odd peak amplitude oscillation from the wave diffraction at the edge. Our theory is not only valid for plasmons in graphene but also for other 2D polaritons, such as phonon polaritons in ultrathin boron nitride flakes and exciton polariton in two-dimensional semiconductors.