We theoretically demonstrate a novel, to the best of our knowledge, mechanism for dark pulse excitation in normal dispersion microresonators exploiting free carrier dispersion and free carrier absorption effects due to multi-photon absorption. Dark pulses can be generated in the three- and four-photon absorption regimes in the presence or absence of external reverse bias to control the lifetime of free carriers, respectively. Direct generation of dark pulses is proven to be feasible in both regimes with a frequency fixed laser. The dynamics of their temporal and spectral evolution have also been investigated. Our findings establish a reliable path for dark pulse and Kerr microcomb generation in related platforms with simplified controlling and tuning techniques.
We theoretically investigate dynamics of dark pulse and Raman-Kerr microcombs generation influenced by higherorder effects, including high-order dispersion (HOD), stimulated Raman scattering (SRS) and self-steepening (SS) effects in silicon microresonators. These three effects cause the delay of dark pulse individually, or interact with each other to alter the drift velocity and direction of pulses. HOD effect can change pulse shift direction and even cause bifurcation. The temporal drift induced by SS or SRS effects could be balanced by the simultaneous third-order dispersion (TOD) engineering. In spectral domain, stable Raman-Kerr frequency comb will be generated due to the competition between strong SRS and Kerr effects. The Raman comb components are suppressed when HOD effect coexists, while SS effect has ignorable effect on the distribution of the Raman comb. Furthermore, the SS effect will increase the total energy of the spectrum by shifting the dispersive wave (DW) generation to the longer wavelength side. Our findings could deepen the understanding of intracavity nonlinear dynamics and provide theoretical guidance to precisely control the stabilization of dark pulse and the generation of broadband mid-infrared (MIR) microcomb.
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