Magnetoelectric (ME) sensors are an important tool to detect weak magnetic fields in the industry; however, to date, there are no high-quality ME sensors available for high-temperature environments such as engines, deep underground, and outer space. Here, a 0.364BiScO3–0.636PbTiO3 piezoelectric ceramic and Terfenol-D alloy with a Curie temperature of 450 and 380 °C, respectively, were bonded together by an inorganic glue to achieve a high-temperature ME sensor. The ceramic shows a piezoelectric d33 coefficient of 780 pC/N at 420 °C, and the inorganic glue has a high maximum stress of 9.12 MPa even at 300 °C. As a result, the sensor exhibits the maximum ME coefficient αE of 2.008, ∼1.455, and ∼0.906 V cm−1 Oe−1 at 20, 200, and 350 °C, respectively. Most importantly, the magnetic field detecting precision is as small as 42 nT at 20–350 °C. The ME sensor provides an effective solution for the detection of weak magnetic fields in harsh environments.
High‐power piezoelectric ceramics are typically driven to output vibration velocity (v0) under high AC electric fields. Herein, the Fe2O3 doped 0.125 Pb(Zn1/3Nb2/3) O3–0.075 Pb(Mn1/3Nb2/3)O3–0.8 Pb(Zr0.48Ti0.52)O3(PZMNZT–xFe; x = 0.05–0.35) piezoelectric ceramics were prepared to enhance v0, and the favorable comprehensive electrical properties, such as d33 = 315 pC/N, Qm = 1738, kp = 0.58, kt = 0.48, εr = 1156, tan δ = 0.4%, and Tc = 320°C, were achieved in the PZMNZT–0.15Fe ceramic. Most importantly, the PZMNZT–0.15Fe ceramic presented a reliable v0 of 0.90 m/s, which was 2.25 times of the commercial PZT4 ceramic (∼0.40 m/s). The excellent high‐power performance should be attributed to ordering functional elements such as crystal grains and ferroelectric domains. Overall, this work reveals that the PZMNZT–0.15Fe ceramic is competitive for high‐power applications.
Flexible
devices have aroused great interest due to their potential
for wearable and portable applications. In this paper, the [001]-oriented
all-inorganic perovskite CsPbBr3 films were grown on a
flexible polyimide substrate, and the corresponding flexible self-powered
photodetectors (PDs) were prepared. The [001]-oriented CsPbBr3 films have an atomically flat surface and a low defect density.
Under zero bias voltage and 405 nm irradiation, the flexible PD presents
a responsivity of 151.9 mA W–1 and a specific detectivity
of 1.895 × 1013 Jones under a light intensity of 2
μW cm–2 and a photocurrent on/off ratio of
4.54 × 106 under a light intensity of 165 mW cm–2. The CsPbBr3 PDs can work without an external
power supply and are typical self-powered detectors. In addition,
the detector still exhibits excellent flexibility and electrical stability
after the repeated bending with the 4 mm radius. This study is expected
to promote the commercial application of large-area flexible perovskite-based
photoelectronic devices.
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