We show that from measurements of the re6ectivity of a uniaxial medium taken at a finite incidence angle with sand p-polarized light it is possible to determine the dielectric function both parallel and perpendicular to the optical axis. When applied to layered compounds with its surface parallel to the layers, this technique allows for an accurate determination of the loss function perpendicular to the layers. This is demonstrated for the example of c-axis-oriented thin films of the high-T, superconductor T12Ba&Ca&Cu30&0, on which we carried out polarized re8ectivity measurements at 45' incidence angle above and below T,.
The use of X-ray fluorescence and reflectivity techniques for the characterization of the layer structures of multiple-layer thin films is described. The X-ray fluorescence technique is used for the precision determination of composition and layer thicknesses of two triple-layer NiFe, Cu, and Cr thin films. The X-ray reflectivity technique is used to determine the values of layer thickness, density, and roughness of a six-layer Ta/FeMn/NiFe/Cu/NiFe/Ta thin film. Both X-ray fluorescence and reflectivity techniques are used for the analysis of two Au/NiFe multilayers. The results showed that the X-ray fluorescence and reflectivity techniques are complimentary.The use of both techniques for layer-structure determinations improves the reliability of the analysis.
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