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A potential application, quantum diode based on the adiabatic pumping between two specific left and right edge modes, is explored in a one-dimensional cyclically modulated circuit quantum electrodynamic dimer mapped successfully to the paradigmatic Su-Schrieffer-Heeger model. The quantum diode is characterized by the presence of nonreciprocity in transport, which describes the one-way transfer between excitations at both boundary resonators of the lattice. We find that the quality of the quantum diode defined by fidelity can be improved by increasing the modulation amplitude, i.e., the one-way excitation transfer process becomes more and more pronounced with the increase of the modulation amplitude. By further modifying the cyclical modulation and optimizing the control function, we also realize a much faster one-way excitation transfer to accelerate the nonreciprocal transport in the quantum diode, where almost a threefold reduction in time spent can be achieved. Our work provides a distinct idea and insight for the application of the quantum transport in topological systems.

A novel Performance Optimized Carrier Stored Trench Gate Bipolar Transistor (CSTBT) with Low Switching Loss has been proposed. By applying a positive DC voltage to the shield gate, the carrier storage effect is enhanced, the hole blocking capability is improved and the conduction loss is reduced. The DC biased shield gate naturally forms inverse conduction channel to speed up turn-on period. Excess holes are conducted away from the device through the hole path to reduce turn-off loss (Eoff). In addition, other parameters including ON-state voltage (Von), blocking characteristic and short circuit performance are also improved. Simulation results demonstrate that our device exhibits a 35.1% and 35.9% decrease in Eoff and turn-on loss (Eon), respectively, in comparison with the conventional shield CSTBT (Con-SGCSTBT). Additionally, our device achieves a short-circuit duration time that is 2.48 times longer. In high-frequency switching applications, device power loss can be reduced by 35%. It should be noted that the additional DC voltage bias is equivalent to the output voltage of the driving circuit, enabling an effective and feasible approach towards high-performance power electronics applications.