Summary Objective The pathophysiology of sudden unexpected death in epilepsy (SUDEP) remains undetermined. Seizures are accompanied by respiratory dysfunction (RD). Postictal generalized EEG suppression (PGES) may follow generalized tonic-clonic seizures (GTCS). Following GTCS patients have impaired arousal and may be motionless. Patients with SUDEP are usually prone. Postictal immobility (PI) may contribute to SUDEP by not permitting repositioning of the head to allow unimpeded ventilation. To determine whether RD and/or ictal characteristics are associated with PI, we analyzed patients with GTCS in the Epilepsy Monitoring Unit. Method We investigated for associations between PI duration and: PGES, ictal/postictal oxygen saturation (SpO2), end-tidal CO2 (ETCO2), seizure localization, duration, and tonic and total convulsive phase duration. We investigated for linkage between PGES and these measures. Results 70 patients with 181 GTCS and available SpO2 and/or ETCO2 data were studied. Simple linear regression analysis by seizures showed that PI duration was associated with peak peri-ictal ETCO2 (p=0.03), duration of oxygen desaturation (p=0.005) and with SpO2 nadir (p=0.02). PI duration was not associated with tonic, convulsive phase or total seizure duration. Analysis by patients also showed significant association of PI with RD. Duration of PI was longer following seizures with PGES (p<0.001). PGES was not associated with the tonic, convulsive phase or total seizure duration. SpO2 nadir was lower in seizures with PGES (p=0.046), ETCO2 peak change (p=0.003) was higher and duration of ETCO2 elevation (p=0.03) was longer. Multivariable regression analysis showed that PGES and severe RD were associated with PI duration. Significance The duration of PI and presence of PGES are associated with peri-ictal RD. The duration of PI is also associated with the presence of PGES. Seizure duration or duration of the convulsive phase is not associated with PI or PGES. Interventions aimed at reversing impaired arousal and PI may reduce SUDEP risk.

Due to their low‐symmetry lattice characteristics and intrinsic in‐plane anisotropy, 2D pentagonal materials, a new class of 2D materials composed entirely of pentagonal atomic rings, are attracting increasing research attention. However, the existence of these 2D materials has not been proven experimentally until the recent discovery of PdSe2. Herein, penta‐PdPSe, a new 2D pentagonal material with a novel low‐symmetry puckered pentagonal structure, is introduced to the 2D family. Interestingly, a peculiar polyanion of [SePPSe]4− is discovered in this material, which is the biggest polyanion in 2D materials yet discovered. Strong intrinsic in‐plane anisotropic behavior endows penta‐PdPSe with highly anisotropic optical, electronic, and optoelectronic properties. Impressively, few‐layer penta‐PdPSe‐based phototransistor not only achieves excellent electronic performances, a moderate electron mobility of 21.37 cm2 V−1 s−1 and a high on/off ratio of up to 108, but it also has a high photoresponsivity of ≈5.07 × 103 A W−1 at 635 nm, which is ascribed to the photogating effect. More importantly, penta‐PdPSe also exhibits a large anisotropic conductance (σmax/σmax = 3.85) and responsivity (Rmax/Rmin = 6.17 at 808 nm), superior to most 2D anisotropic materials. These findings make penta‐PdPSe an ideal material for the design of next‐generation anisotropic devices.

Theory resolves the anatase–rutile phase junction structure and characterizes its role in photocatalysis as a single-way valve modulating electron–hole separation.

Photocatalytic water oxidation is both phase and surface structure-sensitive due to the heat-driven first-step of O–H bond breaking.

Second harmonic generation (SHG) of two-dimensional (2D) layered materials has attracted immense research interests due to the abilities of photon generation, manipulation, transmission, detection, and imaging for the applications of modern on-chip nanophotonic devices. Some layered materials with broken inversion symmetry associated with their 2D nature enable the development of nanophotonic and nanooptoelectronic devices based on the second harmonic generation effect. Recently, many 2D materials with broken inversion symmetry have been discovered, which not only exhibit SHG quantum effects but also greatly promote the development of nanophotonics. In this review, we review the recent developments of all 2D SHG materials, including the graphene-like family, transition metal dichalcogenides, IIIA-VIA compounds and others. We focus on their fabrication, structural characteristics, and generating mechanism and basic characteristics of SHG, associated with the main strategies to tune, modulate, and enhance the SHG of 2D materials. Additionally, several practical applications and possible future research directions of 2D material-based SHG are discussed.

A high-performance acetone sensor utilizing an emerging indispensable V4C3Tx MXene is described via combining experimental results with theoretical study.

Hydrothermal liquefaction (HTL) is a promising technology that involves converting biomass into a liquid energy carrier called bio-oil in sub/supercritical water. The unique physico-chemical properties of bio-oil, particularly its remarkably high energy density, renewability, and sustainability, can address current global environmental challenges and energy crisis. This review assesses the influence of operating parameters, including biomass type, reaction temperature, holding time, biomass/H 2 O ratio, heating rate, pressure, and atmosphere, and catalysis, on the yield and quality of bio-oil. The existing problems in HTL are also analyzed, and its further development is explored.

Abstract2D noble‐transition‐metal chalcogenides (NTMCs) are emerging as a promising class of optoelectronic materials due to ultrahigh air stability, large bandgap tunability, and high photoresponse. Here, a new set of 2D NTMC: Ta2PdS6 atomic layers is developed, displaying the excellent comprehensive optoelectronic performance with an ultrahigh photoresponsivity of 1.42 × 106 A W−1, detectivity of 7.1 × 1010 Jones and a high photoconductive gain of 2.7 × 106 under laser illumination at a wavelength of 633 nm with a power of 0.025 W m−2, which is ascribed to a photogating effect via study of the device band profiles. Especially, few‐layer Ta2PdS6 exhibits a good broadband photoresponse, ranging from 450 nm in the ultraviolet region to 1450 nm in the shortwave infrared (SIR) region. Moreover, this material also delivers an impressive electronic performance with electron mobility of ≈25 cm2V–1s–1, Ion/Ioff ratio of 106, and a one‐year air stability, which is better than those of most reported 2D materials. Our studies underscore Ta2PdS6 as a promising 2D material for nano‐electronic and nano‐optoelectronic applications.