Wide-band gap ZnO semiconductors are attractive materials for the investigation of microcavity exciton polaritons due to the large exciton binding energy and oscillator strength. We report the growth and characterization of bulk ZnO-based hybrid microcavity. The phenomenon of strong exciton-photon coupling at room temperature has been observed in the ZnO-based hybrid microcavity structure, which consists of 30 pair epitaxially grown AlN/AlGaN distributed Bragg reflector ͑DBR͒ on the bottom side of the 3 / 2 thick ZnO cavity and 9 pair SiO 2 / HfO 2 DBR as the top mirror. The cavity quality factor is about 221. The experimental results show good agreement with theoretically calculated exciton-polariton dispersion curves based on transfer matrix method. From the theoretical and experimental exciton-polariton dispersion curves with two different cavity-exciton detuning values, the large vacuum Rabi splitting is estimated to be about 58 meV in the ZnO-based hybrid microcavity.

The covalent electron density, which makes Si(222) measurable, is subject to laser excitation. The three‐wave Si(222)/() diffraction at 7.82 keV is used for phase measurements. It is found that laser excitation causes a relative phase change of around 4° in Si(222) in the first 100 ps of excitation and this is gradually recovered over several nanoseconds. This phase change is due to laser excitation of covalent electrons around the silicon atoms in the unit cell and makes the electron density deviate further from the centrosymmetric distribution.

Empirical mode decomposition (EMD) was used to efficiently distinguish weak random-cavity emission from large broad spontaneous emission of the ZnO bulk and the multiple quantum wells (MQWs) structures. By fast Fourier transforming (FFT) the EMD results, we obtained the optical cavity lengths of random lasing and their corresponding emission intensity. With increasing pumping power, the EMD-FFT method confirms that the nonlinear trend of the random lasing emission in ZnO bulk and the change in optical cavity length is a result of change in refractive index dispersion due to the bandgap renormalization with high excited carrier density in nonpolar a-plane ZnO MQWs.

We report the influence of Mn dopant on magnetic properties of Zn0.95Mn0.05O (ZMO)/Al2O3(0 0 0 1) hetero-epitaxial systems grown by using pulsed-laser deposition. The room temperature (RT) intrinsic ferromagnetic (FM) ordering verified by superconducting quantum interference device magnetometer and x-ray magnetic circular dichroism spectrum of Mn L2,3 edges is ascribed to the substitutional Mn atoms in the Zn site of ZnO. Mn in ZMO has a tetrahedral local symmetry instead of the octahedral symmetry of MnO, after verifying the absence of the Mn-related impurities or clusters in ZMO epitaxial film by Mn K-edge and Zn K-edge x-ray absorption spectroscopy spectrum, as well as the analysis of long-range structural ordering on Renninger scan of forbidden (0 0 0 5) reflection in x-ray diffraction, transmission electron microscopy and Raman spectrum. Comparison of x-ray absorption spectra of ZMO with those of ZnO epilayers at O K-, Zn K-, and L3-edges indicates that the substitution of the Zn site with Mn enhances the charge-transfer (CT) transition and the presence of Zn vacancies (VZn) also dominate the photoluminescence (PL) spectrum, implying that the formation of numerous VZn defects plays an important role in activating FM interactions. The strong CT effect and the existence of high-density VZn suggest that the intrinsic RT FM ordering of insulating ZMO is a result of the formation of the bound magnetic polarons (BMPs) that interact with each other via intermediate magnetic impurities.