Epitaxial growth of vertical In2O3 (111) nanowires with hexagonal cross‐section on a‐plane sapphire is reported. The figure showing the vertical wires is viewed at 45° from the substrate normal. These wires taper gradually towards the tops and they start to bend near the tips. Because of the low‐temperature growth, the wires possess a new hexagonal symmetry and a shortest photoluminescence wavelength among those that have been reported for In2O3 nanowires.
Indium tin oxide (ITO) thin films have been deposited by pulsed laser deposition on m-plane (100) and r-plane (012) sapphire substrates. For both substrates, the films were grown with their [110] direction perpendicular to the substrate planes under the conditions of high growth temperature and high oxygen pressure. Their in-plane epitaxial relations with the substrates were identified to be ITO[001] ∥ Al2O3[020] and for the m-plane substrate. For the r-plane substrate, two types of lattice matching were observed: one being and , the other being and . The electrical properties were measured by the Hall effect and van der Pauw methods at room temperature. All of the samples have low electrical resistivity on the order of 3.0 × 10−4 Ω cm, high carrier concentration of about 2.5 × 1020 cm−3, and mobility ranging from 70 to 90 cm2 V−1 s−1.
Improving
power conversion efficiency of photovoltaic devices has been widely
investigated; however, most research studies mainly focus on the modification
of the absorber layer. Here, we present an approach to enhance the
efficiency of Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar
cells simply by tuning the CdS buffer layer. The CdS buffer layer
was deposited by chemical bath deposition. Indium doping was done
during the growth process by adding InCl3 into the growing
aqueous solution. We show that the solar cell efficiency is increased
by proper indium doping. Based on the characteristics of the single
CdS (with or without In-doping) layer and of the CIGSSe/CdS interface,
we conclude that the efficiency enhancement is attributed to the interface-defect
passivation of heterojunction, which significantly improves both open
circuit voltage and fill factor. The results were supported by SCAPS
simulations, which suggest that our approach can also be applied to
other buffer systems.
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