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Methyl jasmonate (MeJA) and its free-acid form, jasmonic acid (JA) are naturally occurring plant growth regulators widely distributed in higher plants. In order to improve the sensitivity for the analysis of MeJA at low levels in small amounts of plant samples, a monoclonal antibody (MAb) (designated as MAb 3E(5)D(7)C(4)B(6)) against MeJA was derived from a JA-bovine serum albumin (BSA) conjugate as an immunogen. The antibody belongs to the IgG(1) subclass with a kappa type light chain and has a dissociation constant of approximately 6.07 x 10(-9) M. MAb3E(5)D(7)C(4)B(6) is very specific to MeJA. It was used to develop a direct competitive enzyme-linked immunosorbent assay (dcELISA), conventional and simplified indirect competitive ELISAs (icELISA). JA was derivatized into MeJA for the ELISA analysis. The IC(50) value and detection range for MeJA were, respectively, 34 and 4-257 ng/mL by the conventional icELISA, 21 and 3-226 ng/mL by the simplified icELISA and 5.0 and 0.7-97.0 ng/mL by the dcELISA. The dcELISA was more sensitive than either the conventional or simplified icELISA. The assays were used to measure the content of jasmonates as MeJA in tobacco leaves under drought stress or inoculated with tobacco mosaic virus and tomato leaves inoculated with tomato mosaic virus or Lirioinyza sativae Blanchard as compared with the corresponding healthy leaves. The increased jasmonates content indicated its role in response to the drought stress and pathogens.

The interface engineering of Cu(In,Ga)Se2 (CIGS)‐based solar cells is challenging for high‐efficiency devices, especially for the CdS/CIGS heterojunction interface. Recently, post‐treatment of the CIGS surface, as an efficient approach to passivate the defects at the CdS/CIGS interface, has attracted widespread attention. Here, a simple Ag surface treatment process is used to realize the passivation of interface defects and the enhancement of the CdS/CIGS heterojunction. This process not only reduces the surface roughness of CIGS films significantly, but also contributes to controlling the Ga composition in the surface layer. Furthermore, characterization techniques reveal that Ag surface treatment can effectively decrease the defect concentrations at the heterojunction interface and enhance the CdS/CIGS heterojunction quality with appropriate Ag deposition duration. Further investigations on the changed defect level caused by the Ag surface treatment indicate that the increased defect level is likely related to the shift of valence band maximum. Eventually, the efficiency of the optimum device has a relative increase of about 18% compared with that of the reference solar cell. This work focuses on revealing the differences of the CIGS surface and CdS/CIGS interface caused by Ag, which provides a new surface processing method for the passivation of the CdS/CIGS heterojunction.

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Sn/Cu/ZnS precursor were deposited by evaporation on soda lime glass at room temperature, and then polycrystalline thin films of Cu2ZnSnS4 (CZTS) were produced by sulfurizing the precursors in a sulfur atmosphere at a temperature of 550 °C for 3 h Fabricated CZTS thin films were characterized by X-ray diffraction, energy dispersive X-ray spectroscopy, ultraviolet-visible-near infrared spectrophotometry, the Hall effect system, and 3D optical microscopy. The experimental results show that, when the ratios of [Cu]/([Zn] + [Sn]) and [Zn]/[Sn] in the CZTS are 0.83 and 1.15, the CZTS thin films possess an absorption coefficient of larger than 4.0 × 104 cm−1 in the energy range 1.5–3.5 eV, and a direct band gap of about 1.47 eV. The carrier concentration, resistivity and mobility of the CZTS film are 6.98 × 1016 cm−3, 6.96 Ω·cm, and 12.9 cm2/(V·s), respectively and the conduction type is p-type. Therefore, the CZTS thin films are suitable for absorption layers of solar cells.

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