Articles you may be interested inPlasma enhanced chemical vapor deposition of silicon oxide films with divinyldimethylsilane and tetravinylsilane J. Vac. Sci. Technol. A 24, 291 (2006); 10.1116/1.2171706 Chemical vapor deposition boron carbo-nitride deposited using dimethylamine borane with ammonia and ethylene J.Effects of O 2 and He on the properties of the trimethyl silane based low-k films Characterization of low dielectric constant plasma enhanced chemical vapor deposition fluorinated silicon oxide films as intermetal dielectric materialsIn this article, methyl-doped silicon oxide films deposited using Flowfill™ chemical vapor deposition ͑CVD͒ technology have been chracterized for use in inter-layer dielectrics application. Films with different methyl concentrations were deposited and characterized in order to study the effect of methyl concentration on film properties. Material properties including chemical composition and bonding structure, density, dielectric constant ͑͒, refractive index, thermal stability, resistance to moisture absorption, leakage current, and hardness were investigated. The films have a as low as 2.7 and were found to be thermally stable up to 550°C. They show excellent resistance to moisture absorption. Low-leakage current and breakdown voltage higher than 3 MV/cm were obtained. Their hardness is lower than silicon oxide deposited using plasma-enhanced CVD but is higher than most polymer and nanoporous low-dielectric constant ͑low-͒ materials. The chemical mechanical polishing ͑CMP͒ characteristics of these films and their stability under plasma treatments were also studied. Film's CMP removal rate decreases as the methyl concentration in film increases. An atomically smooth surface with root mean square surface roughness Ͻ1 nm over a 10ϫ10 m area was obtained after CMP. This film remains stable under nitrogen (N 2 ) and hydrogen (H 2 ) plasma but is damaged by oxygen (O 2 ) plasma.
In this work, the properties and chemical mechanical polishing (CMP) characteristics of thin films of a new low dielectric constant (low-) oxide deposited using Flowfill chemical vapor deposition (CVD) technology are presented. This oxide film consists of silicon dioxide network with methyl groups incorporated and has a dielectric constant as low as ϳ2.7. The film properties were studied using Fourier transform infrared spectroscopy (FTIR), spectroscopic ellipsometry, Rutherford backscattering, atomic force microscopy, and capacitance-voltage measurements. The refractive index, as low as 1.38, was measured using spectroscopic ellipsometry. The surface was found to be more hydrophobic compared to conventional CVD oxide. The stretching mode of the Si-O bond peak in the FTIR spectrum shifts to lower wavenumber, which corresponds to lower Si-O bonding energy, with increase in the methyl concentration inside the film. The CMP removal rate decreases as the methyl concentration in the film increases. An atomically smooth surface with root mean square surface roughness <1 nm over an area 2 ϫ 2 m was obtained after CMP. Our results suggest that the incorporation of methyl groups results in a reduction in the CMP removal rate. We speculate that the diffusion of water into the film is probably the CMP removal rate-limiting step.
Polycrystalline Si 1Ϫx Ge x ͑poly-SiGe͒ is a known gate electrode material that can mitigate poly-depletion effects, which exist in deep submicrometer complementary metal-oxide-semiconductor ͑CMOS͒ transistors, due to its lower dopant activation temperatures and smaller bandgaps. As an important step toward the manufacturing of poly-SiGe electrode-based CMOS transistors with enhanced performances, this study focuses on the deposition of poly-SiGe films with different structural features and the characterization of the physical properties of these films. The electrical performance and the reduction in poly-depletion effects of the poly-SiGe electrodes in capacitors fabricated using these films were verified using capacitance-voltage measurements.
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