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Of all the countries presently industrializing, both going green and going smart ideas can be likened to green development, in that they are helping to address or identify new routes out of environment and development conflicts. Environmental pollution issues loom large for China, and the scale of its transformation makes its proposed solutions of widespread interest. China has begun to decouple some environmental pressure from economic growth, and an innovation-driven strategy is proposed to deal with the synergic development between the economy and environment. Considering both positive and negative effects of the innovation-driven strategy on green economic development, the aim of this paper is to find out the influence path and mechanism of policies and measures of the innovation strategy on green economic development, through the empirical analysis of panel data of 47 pilot smart cities in China from 2009 to 2017. The results show that the innovation-driven strategy has a positive effect on green development, while different innovation-driven indicators play different roles in the promotion of economic green development. Practically, this research provides a decision-making reference for sustainable development policy formulation in developing countries, especially in emerging economies.

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Piezoresponse force microscopy (PFM) technique has been utilized to study the evolution of domain structure with varying Pb(Zr,Ti)O3(PZT) thickness on GaN substrate. Sol-gel PZT films were deposited on the GaN∕sapphire substrate with PZT thickness of 100, 200, and 300nm. The films exhibit ferroelectric properties that vary as a function of the film thickness. This is explained by the mechanical stress at the PZT∕GaN interface. The thicker film (300nm) is characterized by the presence of a number of oppositely polarized domains and a relatively high value of the effective piezoelectric constant. The laminar domain structure, consisting of 90° and 180° domains, has been revealed in the thinner (200nm) PZT film. Both films show clear ferroelectric switching behavior, which is in contrast to the thinnest film (100nm), where no switching has been observed due to mostly in-plane polarization orientation. The observed results indicate the utility of the PFM technique for characterization of the electronic properties of the PZT∕GaN heterostructures.

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