Investigation of Pb(Zr,Ti)O3∕GaN heterostructures by scanning probe microscopy

Gruverman, Alexei; Cao, Wei; Bhaskar, S.; Dey, Satadru

doi:10.1063/1.1765740

Cited by 37 publications

(21 citation statements)

References 20 publications

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“…Integrating these oxides with wide bandgap polar semiconductors like GaN is of particular interest given the potential for both passive and active coupling between the fixed permanent semiconductor dipole and the reorientable ferroelectric dipole. In principle, ferroelectric-GaN interfaces are populated by large charge densities that must compensate the polarization discontinuity [2][3][4][5]. These charges are expected to form a 2-D electron or hole gas whose properties are determined by the polarization values and the interface separating the adjacent layers [6].…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Losego¹,

Kourkoutis²,

Mita³

et al. 2009

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 99%

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Losego¹,

Kourkoutis²,

Mita³

et al. 2009

Journal of Crystal Growth

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“…and the hysteretic and nonlinear E − P relation is specified by (5). As illustrated in Figure 3, the boundary conditions are defined by a zero displacement at x = 0 and the balance of forces between the piezoelectric actuator and the damped oscillator at x = L yields…”

Section: Structural Modelmentioning

confidence: 99%

“…Highly accurate nanopositioning control becomes increasingly important in applications such image steering devices [24], piezoresponse force microscopy [5], atomic manipulation [22], and protein delivery [23]. Often, piezoelectric materials are chosen as actuators in nanopositioning stages as well as embedded actuators within MEMS devices [24].…”

Section: Introductionmentioning

confidence: 99%

Nonlinear Optimal Tracking Control of a Piezoelectric Nanopositioning Stage

Oates¹,

Smith²

2006

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High performance nanopositioning stages, used in a variety of applications such as atomic force microscopy and three-dimensional nanometer-scale lithography, require stringent position control over relatively large displacements and a broad frequency range. Piezoelectric materials, which are typically employed in nanopositioining stages, provide excellent position control when driven at relatively low frequency and low field levels. However, in applications where the stage operates over a relatively large region (microns to millimeters) and broad frequency range (Hz -kHz), piezoelectric materials often exhibit nonlinear and rate-dependent hystereis which requires control designs that can effectively accommodate such behavior. In this paper, a nonlinear, thermal-relaxation, piezoelectric constitutive law is incorporated into an open loop optimal tracking control design to accurately track a desired reference signal when nonlinearities, thermal relaxation and hyteresis are present. A comparison between linear optimal control and the nonlinear optimal control design is given to illustrate performance enhancements when the constitutive behavior is included in the control design.

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“…The focus on nanoscale material's research and device development continues to increase, highly accurate nanopositioning control becomes increasingly important in applications such image steering devices [6], nanoscale material characterization [7], atomic manipulation [8], and protein delivery [9]. Piezoelectric materials are often employed as actuators in nanopositioning stages as well as embedded actuators within MEMS devices [6].…”

Section: Performing Organization Name(s) and Address(es)mentioning

confidence: 99%

Nonlinear Control Design for a Piezoelectric-Driven Nanopositioning Stage

Oates

Smith

2005

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A model-based nonlinear optimal control design is developed and applied to a piezoelectric-driven nanopositioning stage to demonstrate high accuracy displacement control when ferroelectric nonlinearities, hysteresis and relaxation behavior are present in the piezoelectric actuator. The nonlinear control design is compared to Proportional-Integral-Derivative (PID) control to illustrate performance enhancements when ferroelectric material behavior is directly incorporated into the control design. A multi-scale ferroelectric constitutive law is used to model the nonlinear, hysteretic and relaxation behavior of the piezoelectric actuator. The constitutive model is implemented in a structural model of a nanopositioning stage that uses piezoelectric stack actuators.Both moderate frequency (100 Hz) and quasi-static (0.2 Hz) operating regimes are considered to address issues associated with high accuracy atomic force microscopy applications. The nonlinear control design includes an open-loop nonlinear control input determined from finite-dimensional optimal control theory and linear perturbation feedback determined from Proportional Integral (PI) control. The hybrid control design reduces error by over two orders of magnitude when nonlinearities, hysteresis and relaxation behavior is present. Additionally, the magnitude of control input is considerably smaller when the hybrid control design is implemented.

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Investigation of Pb(Zr,Ti)O3∕GaN heterostructures by scanning probe microscopy

Cited by 37 publications

References 20 publications

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Epitaxial Ba0.5Sr0.5TiO3–GaN heterostructures with abrupt interfaces

Nonlinear Optimal Tracking Control of a Piezoelectric Nanopositioning Stage

Nonlinear Control Design for a Piezoelectric-Driven Nanopositioning Stage

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