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Topology plays a fundamental role in contemporary physics and enables new information processing schemes and wave device physics with built-in robustness. However, the creation of photonic topological phases usually requires complex geometries that limit the prospect for miniaturization and integration and dispossess designers of additional degrees of freedom needed to control topological modes on-chip. By controlling the degree of asymmetry (DoA) in a photonic crystal with broken inversion symmetry, we report single-mode lasing of valley-Hall ring cavities at telecommunication wavelength. The DoA governs four photon confinement regimes at the interface of topologically distinct valley-Hall domains and evidences an interplay between the width of the topological bandgap and the quality factor of ring-like modes for single-mode operation. Our results open the door to novel optoelectronic devices and systems based on compact topological integrated circuits.

Miniature semiconductor lasers have attracted a large amount of interest owing to their potential as highly integrated components in photonic circuits or in sensors. Particularly, microdisk lasers exploiting whispering gallery modes have been regarded as important candidates because of their relatively small footprint and low threshold. However, it has been challenging for microdisks to operate under single mode operation and to lase in a preselected mode. We report subwavelength microdisk resonators suspended in air with connecting bridges and propose a simple method using the number and symmetry of bridges to enhance or reduce wave confinement in the whispering gallery cavity. Moreover, a suitable choice of bridges increases the quality factor of microdisks compared to microdisk resonators without bridges. Using this method, we demonstrate single mode lasing of preselected modes at telecommunication wavelength.

In this Letter, we present a design strategy for the realization of electrically powered bound states in the continuum (BIC) lasers. Despite growing attention of the optics community for BICs, practical uses of BICs in an active device are still unestablished. A large index contrast and out-of-plane symmetries that aid the formation of BICs are not trivial to achieve using conventional approaches for semiconductor laser design. Here, we propose a doping scheme to circumvent this issue. We also show that the introduction of material absorption due to carriers deteriorates the quality factor of BIC modes and show that a suitable compromise between electrical conductivity and optical loss can be achieved.