An approach is proposed to project thermal behavior in a semiconductor integrated-circuit structure onto a functional space based on the proper orthogonal decomposition (POD). The approach substantially reduces the numerical degrees of freedom (DOF) needed for thermal simulations and requires no assumptions about physical geometry, dimensions, or heat flow paths. The POD approach is applied to a multi-fin FinFET structure having heat sources driven by power pulse excitations with time shifts, width variations, and amplitude modulations. The POD models were compared with detailed numerical simulations (DNS) and it was shown that the POD approach provides thermal solutions that were as accurate and detailed as the DNS. It offers a reduction in numerical DOFs by nearly six orders of magnitude to capture the peak temperatures in multi-fin FinFETs.Index Terms-Compact thermal model (CTM), FinFET, proper orthogonal decomposition (POD), reduced-order model (ROM), thermal simulation.
An accurate photovoltaic (PV) model is developed based on singular value decomposition (SVD) using measured or simulated data for PV current in terms of cell temperature, solar irradiance and output voltage. The SVD model projects the problem onto a space described by a small number of orthogonal basis functions (or modes). The number of modes adopted for constructing the model is determined based on the magnitudes of the singular values and the desired accuracy. This model is further implemented in a circuit simulator and applied to modeling of a PV array. Two PV test cells are used to verify the validity of the developed model. The SVD model is also demonstrated in a PV array with a non-uniform temperature profile. The developed SVD PV model requires no assumption to construct the model and is remarkably simple and accurate. To our best knowledge, this is the first application of SVD to modeling of semiconductor device characteristics and the first representation of SVD as an electric circuit.
A reduced basis element method is presented based on proper orthogonal decomposition (POD) to develop thermal models for FinFET devices and integrated circuits. The POD approach is able to substantially reduce numerical degrees of freedom (DOF) while offering spatial thermal solution as detailed as detailed numerical simulation. The POD thermal models for the selected FinFET blocks can be stored in a library for constructing a larger circuit structure. This study demonstrates that, using the developed approach, an accurate thermal model for a multi-block FinFET structure can be developed to capture all the hot spots in the structure with a reduction in DOFs by nearly 6 orders of magnitude, compared to DNS.
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