In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique was employed to bond the InP substrates to Si substrates, thereby forming high-quality InGaAs channel on Si. The 120 nm gate length device shows a maximum drain current (ID,max) of 569 mA/mm, and the maximum extrinsic transconductance (gm,max) of 1112 mS/mm. The current gain cutoff frequency (fT) is as high as 273 GHz and the maximum oscillation frequency (fMAX) reaches 290 GHz. To the best of our knowledge, the gm,max and the fT of our device are the highest ever reported in InGaAs channel HEMTs on Si substrates at given gate length above 100 nm.
In this paper, we investigated the electrical properties of the Metal‐oxide‐semiconductor gate stack of Ti/Al2O3/InP under different annealing conditions. A minimum interface trap density of 3×1011cm‐2eV‐1 is obtained without postmetallization annealing treatment. Additionally, utilizing Ti/Al2O3/InP MOS gate stack, we fabricated ultra‐thin body buried In0.35Ga0.65As channel MOSFETs on Si substrates with optimized on/off trade‐off. The 200nm gate length device with extremely low off‐current of 0.6nA/μm, and on‐off ratio of 3.3×105, is demonstrated by employing buried low indium (In0.35Ga0.65As) channel with InP barrier/spacer device structure, giving strong potential for future high‐performance and low‐power applications.
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