Epitaxial La 0.1 Bi 0.9 FeO 3 (LBFO) films with SrRuO 3 (SRO) bottom electrodes were fabricated on SrTiO 3 (001) substrates by magnetron sputtering. The LBFO thin films exhibit strong ferroelectric properties. Nonvolatile reversible resistance switchings and switchable photovoltaic effects controlled by electric field have been observed in Pt/ LBFO/SRO heterostructures. With the optimized LBFO film thickness, the observed room temperature pulsed-read resistance switching ratio can reach 10 5 % magnitude by applying ±2.7 V pulse voltages. Besides, the observed ferroelectric switchable photovoltaic effect in the visible wavelength range shows a large tunable open-circuit photovoltage from −75 to −330 mV. The switching mechanisms in resistance and photovoltaic effects are demonstrated to be directly related to the ferroelectric reversal, which can be attributed to the polarization-modulated interfacial barriers and deep trap states.

Electric field induced reversible switchings of the magnetization and resistance were achieved at room temperature in epitaxial Mn:ZnO(110)/BiFeO3(001) heterostructures. The observed modulation of magnetic moment is ∼500% accompanying with a coercive field varying from 43 to 300 Oe and a resistive switching ratio up to ∼10(4)% with the applied voltages of ±4 V. The switching mechanisms in magnetization and resistance are attributed to the ferroelectric polarization reversal of the BiFeO3 layer under applied electric fields, combined with the reversible change of oxygen vacancy concentration at the Mn:ZnO/BiFeO3 interface.

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The accumulation/depletion of charge at the Al:ZnO/PMN-PT interface results in a reversible and nonvolatile resistance state.

Fe3O4 with high Curie temperature and 100% spin polarization is a potential candidate for practical applications in flexible spintronics. In this work, combined with flexible muscovite substrates, the dynamic strain influenced Verwey transition of Fe3O4 has been studied. The Verwey transition temperature increases (decreases) in the inward (outward) bending heterostructures. From the analyses of Fe L2,3 edge X-ray absorption spectroscopy, the reversible modulation originates from the charge reconstruction effect with the valence variations of Fe ions on the tetrahedral site and octahedral site in different bending states. Meanwhile, the charge reconstruction effect enhances the net magnetic moments of the Fe3O4/muscovite heterostructures in bending states.

The resistive switching behavior in the Pt/Fe/BiFeO3/SrRuO3 heterostructures was observed. It results from the ferroelectric polarization modulated the depletion layer width around the BiFeO3/SrRuO3 interface.

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La0.67Sr0.33MnO3 (LSMO) thin films were fabricated on (011)- and (001)-Pb(Mg1/3Nb2/3)1 − xTixO3 (PMN-PT) substrates to investigate the mechanism of electric field regulation. Both (011)- and (001)-LSMO/PMN-PT heterostructures exhibit electric-field-dependent resistance curves with an asymmetric butterfly shape under a bipolar electric field (±10 kV/cm). Confirmed through a mathematical method, the “butterfly” and “asymmetric” characteristics indicate the volatile strain and non-volatile ferroelectric field effects, respectively. However, by applying a unipolar electric field, the electric-field-dependent resistance curves of the (011)-LSMO/PMN-PT heterostructures present a larger loop shape than those in the (001)-LSMO/PMN-PT heterostructure, which is related to the non-volatile strain effect. The volatile strain, non-volatile strain, and ferroelectric field effects on the resistance of the LSMO films are associated with the enhanced or weakened double exchange coupling.