Fast power loss computation was implemented using supervisory control and data acquisition system (SCADA) with personal computer. Logic Control Array (LCA) and EPROM circuits were used to implement SCADA system to facilitate the required measurements to obtain the daily load profile for residential and commercial customers. LCA, EPROM and PC were used to simplify the electronic circuits, reduce the cost and speed up the computation time. An illustrative example had been considered to measure, store and show the active power, reactive power, load voltage, load current, power factor and the shunt capacitors current. It as observed that when 2.7 MVAR bank capacitor inserted in the network the load current decreased from 740.8A to 688.4A and the power factor was improved from 0.80 to 0.93, which reduced the apparent power, hence allowing to add more loads to the network and release the feeder capacitor. A rule-based fuzzy decision maker had been designed and tested with the real data collected from Jordan electricity board using SCADA system. The calculated output was almost similar to that obtained from the first approach presented in this study. The advantage of using fuzzy decision maker was its simplicity that can be implemented on a programmable logic device
The In-doped CdTe/Si (p) heterostruture was fabricated and its electrical and photoelectrical properties were studied and interpreted. During the fabrication processes of CdTe/Si heterojunction, some practical troubles were encountered. However, the important one was the formation of the SiO<sub>2</sub> thin oxide layer on the soft surface of the Si during the formation of the back contact. The silicon wafer was subjected to different chemical treatments in order to remove the thin oxide layer from the silicon wafer surfaces. It was found that the heterojunction with Si (p<sup>+</sup>) substrate gave relatively high open circuit voltage comparing with that of Si (p) substrate. Also an electroforming phenomenon had been observed in this structure for the first time which may be considered as a memory effect. It was observed that there are two states of conduction, non-conducting state and conducting state. The normal case is the non-conducting state. As the forward applied voltage increased beyond threshold value, it switches into the conducting state and remains in this state even after the voltage drops to zero
In this research thin film layers have been prepared at alternate layers of resistive and dielectric deposited on appropriate substrates to form four-terminal R-Y-NR network. If the gate of the MOS structures deposited as a strip of resistor film like NiCr, the MOS structure can be analyzed as R-Y-NR network. A method of analysis has been proposed to measure the shunt capacitance and the shunt conductance of certain MOS samples. Mat lab program has been used to compute shunt capacitance and shunt conductance at different frequencies. The results computed by this method have been compared with the results obtained by LCR meter method and showed perfect coincident with each other.
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