The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell

Mohammad, Wagah F.

doi:10.4236/cs.2012.31007

Cited by 5 publications

(3 citation statements)

References 14 publications

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“…The value of V bi has increased after annealing process. The higher values of V bi may be attributed to the midgap states that act as recombination centers which may arise either from states created as a result of junction fabrication or from lattice mismatch between CdTe and Si [8].…”

Section: The Results and Discussionmentioning

confidence: 99%

The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode

Razooqi

Abdulameer

Hameed

et al. 2013

AMR

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p-CdTe film has been deposited on n-Si(111) substrate by thermal evaporation technique. The prepared CdTe/Si heterojunction diodes have been annealed at 573K. The capacitance-voltage measurements have studied for the prepared heterojunctions under 2 KHz frequencies. The capacitance-voltage measurement indicated that these diodes are abrupt. The capacitance at zero bias, the built in voltage and the doping concentration increased after annealing process while the zero bias depletion region width is decreased. The carrier transport mechanism for CdTe/Si diodes in dark is tunneling-recombination. From current-voltage measurement at dark, the values of ideality factor are 2.9 and 3.8. The values of reverse saturation current are 3.77×10-7and 9.36×10-8Amperes.

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Section: The Results and Discussionmentioning

confidence: 99%

The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode

Razooqi

Abdulameer

Hameed

et al. 2013

AMR

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“…In the CdTe/Si heterojunction solar cell, the CdS/CdTe interface and the CdTe absorber layer are the regions where most defects can occur due to the thin film deposition techniques used and the polycrystalline nature of CdTe compared to the highly controlled fabrication methods and crystalline nature of Si solar cells 13 . The common CdTe thin film deposition techniques are close-spaced sublimation (CSS), sputtering, electrodeposition, chemical spray pyrolysis, thermal evaporation, pulsed laser deposition, etc., which are usually not defect-free processes 14 – 21 . In addition, in the proposed CdTe/Si tandem device, many lattice imperfections in the CdTe layer are likely due to the lattice and thermal mismatches between CdTe or its alloys with Si 7 , 22 .…”

Section: Introductionmentioning

confidence: 99%

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

Isah,

Doroody,

Rahman

et al. 2024

Sci Rep

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A numerical analysis of a CdTe/Si dual-junction solar cell in terms of defect density introduced at various defect energy levels in the absorber layer is provided. The impact of defect concentration is analyzed against the thickness of the CdTe layer, and variation of the top and bottom cell bandgaps is studied. The results show that CdTe thin film with defects density between 1014 and 1015 cm−3 is acceptable for the top cell of the designed dual-junction solar cell. The variations of the defect concentrations against the thickness of the CdTe layer indicate that the open circuit voltage, short circuit current density, and efficiency (ƞ) are more affected by the defect density at higher CdTe thickness. In contrast, the Fill factor is mainly affected by the defect density, regardless of the thin film’s thickness. An acceptable defect density of up to 1015 cm−3 at a CdTe thickness of 300 nm was obtained from this work. The bandgap variation shows optimal results for a CdTe with bandgaps ranging from 1.45 to 1.7 eV in tandem with a Si bandgap of about 1.1 eV. This study highlights the significance of tailoring defect density at different energy levels to realize viable CdTe/Si dual junction tandem solar cells. It also demonstrates how the impact of defect concentration changes with the thickness of the solar cell absorber layer.

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“…The lower efficiency is probably due to the loss of carriers due to recombination within CdTe layer (Mohammad et al 2012;Romeo et al 2004;Bonnet et al 2002;Romeo et al 1998). This is possibly due to surface states which are present in the nanostructured CdTe film.…”

Section: Behavior Of N-cdte/p-si Heterojunctionmentioning

confidence: 99%

Fabrication of CdTe/Si heterojunction solar cell

Bera

Saha

2016

Appl Nanosci

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A simple cost effective method is preferred to grow nanoparticles of CdTe. Nanoparticles of CdTe are grown by simple chemical reduction route using EDA as capping agent and Sodium Borohydride as reducing agent. The grown nanoparticles are characterized using transmission electron microscopy (TEM), X-ray diffraction, optical absorption, and photoluminescence study. From optical absorption study, the band-gap was found to be 2.46 eV. From TEM study, the average particle size was found to be within 8-12 nm which confirms the formation of CdTe nanoparticles. Pl spectra indicate the luminescence from surface states at 2.01 eV, which is less compared to the increased band-gap of 2.46 eV. The grown nanoparticles are used to fabricate a heterojunction of CdTe on P-Si by a spin coating technique for solar cell fabrication in a cost effective way. I-V characteristics of the grown heterojunction in dark as well as under light are measured. Efficiency and fill-factor of the device are estimated.

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The Effects of Fabrication Prameters and Electroforming Phenomenon on CdTe/Si (p) Heterojunction Photovoltaic Solar Cell

Cited by 5 publications

References 14 publications

The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode

The Electrical Characterization of p-CdTe/n-Si (111) Heterojunction Diode

Exploring the impact of defect energy levels in CdTe/Si dual-junction solar cells using wxAMPS

Fabrication of CdTe/Si heterojunction solar cell

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