In this paper we report the growth of high quality SnS thin films with good crystallinity deposited on two-dimensional (2D) mica substrates. It is believed that the 2D nature of SnS, with strong intra-layer covalent bonds and weak inter-layer van der Waals interactions, is responsible for its relative insensitivity to lattice mismatch. We also investigated the reduction of Sn vacancies in the material using Sn-compensation technique during the material growth process. The experimental results clearly demonstrated substantial enhancements in the electrical and structural properties for films deposited using Sn-compensation technique. A mobility of 51 cm2 V−1 s−1 and an XRD rocking curve full width at half maximum of 0.07° were obtained. Sn-compensated SnS/GaN:Si heterojunctions were fabricated and significant improvement in both the I-V characteristics and the spectral responsivities of the devices were characterized.
Over the past few decades, there have been an increasing number of attempts to produce materials for fashion creation aiming at cost effectiveness, low environmental impact, labour friendliness and biodegradability. Among them, biotechnology is believed to be one of the finest substitutes for future fashion creation. A study has been carried out to explore the future development of fashion design and the possible applications of materials which can be grown from natural renewable and degradable resources. A pilot test with five design professionals on the comfort of bacterial cellulosic pellicles produced in varied incubation times and broth concentrations was conducted. This paper reports a further investigation of the receptivity to these bacterial cellulosic pellicles as material for future fashion through comparing and evaluating three comfort factors, namely hand comfort, flexibility comfort and breathability comfort, and two appearance factors, namely colour and texture, with 150 subjects using the random sampling method. The optimal favourable pellicle for fashion creation was identified and presented.
In this paper we present systematic investigations on the growth of SnS van der Waals epitaxies (vdWEs) on different substrates, including crystalline and layered substrates, by molecular beam epitaxy (MBE). Experimental growth of SnS on conventional 3D substrates, such as GaAs, indicates strong interaction between the SnS layer and the substrate resulting in poor crystallinity in general. Substantial improvement in the film crystallinity can be obtained when the deposition is made on layered substrates, with saturated surface bonds, as observed in SnS films deposited on mica and crystalline substrates with a graphene buffer layer. Crystal size as large as one micron and rocking curve FWHM of 0.118° was observed despite the large lattice mismatches. This represents significant improvement over the reported value of ~3°. Several symmetric growth orientations are observed for films grown on mica substrates. The results indicate that weak vdW interactions between the saturated bonds of the substrate surface and the SnS unit layer which is an important factor for achieving high quality epitaxy layered materials.
SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL).Photo-absorption measurements indicate an indirect bandgap of ~1 eV and a direct bandgap of ~1.25 eV with high absorption coefficient, α, of >10 4 cm -1 at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ~81 cm 2 V -1 s -1 was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.
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