MBE growth of van der Waals epitaxy using graphene buffer layer

Abstract

SnS van der Waals epitaxies (vdWEs) were deposited by MBE on graphene buffer layer (GBL).Photo-absorption measurements indicate an indirect bandgap of ~1 eV and a direct bandgap of ~1.25 eV with high absorption coefficient, α, of >10 4 cm -1 at 1.5 eV. Significant improvements in both the grain size and the rocking curve FWHM were observed compared to films deposited without the GBL. Hole mobility of ~81 cm 2 V -1 s -1 was observed for the films deposited on GBL. Such improvements are attributed to the high tolerances in the lattice mismatch between the SnS vdWE and the substrate when a GBL is used.

Review on mechanism of directly fabricating wafer-scale graphene on dielectric substrates by chemical vapor deposition

“…This lack of scalability of the exfoliation technique has initiated an extensive search of new routes for graphene synthesis. Since then, different kinds of methods have been investigated to get high quality and wafer-scale graphene [19][20][21][22][23][24][25]. Among the proposed, one can mention the desorption of silicon from silicon carbide [26][27][28], deposition from chemical graphite suspensions [29,30], growth from a solid carbon source [31][32][33], reduction of graphite oxide [34][35][36], high pressure high-temperature growth and growth from metal carbon melts [37].…”