An ion assisted deposition technique, called Reactive Partially Ionized Beam (RPIB) deposition, was used to prepare amorphous BaxTi2-xOy thin films at a low substrate temperature (<60°C). The stoichiometry of the films varied from ×=l.0 for BaTiO3 to ×=0.2 for Ti-rich films. The optical, thermal, and broadband electrical properties of this class of thin film dielectrics were systematically studied. A lμm BaxTi2-xOy film is optically transparent with a band gap of 4.6eV. Both transmittance and bandgap decrease when the films are increasingly enriched with Ti. The Ti rich films remain amorphous at 600°C while the stoichiometric BaTiO3 crystallizes into the perovskite structure. Annealed Ti rich films are thermally stable (>700°C) with low leakage (<0.lμ/cm2 at 0.5MV/cm) and moderately high dielectric constant (εr = 15-35). Polycrystalline BaTiO 3 deposited at 600°C on a Pt/Ta/SiO2/Si substrate has an εr = 400. Capacitor structures with various metallizations were used to evaluate the dielectric properties, such as breakdown strength, leakage, εr and tanδ from DC to 600MHz. A generic test vehicle was designed and fabricated to extend the frequency domain characterization of the dielectrics up to 40GHz. No dispersion of εr was observed in this frequency range for amorphous BaxTi2-xOy.
This paper explores the need for excqtionally large amounts of bypass capacitance required by WSI and WSW/MCM based systems which are operating at state of the art in switching speeds. This capacitance quired may become amiderably larger than can be obtained by simply making tiin oxide metal plate capacitors unless alternate design styles are adopted for the circuits employed which exhibit less switching noise. ' h e paper explores some of the criteria for picking the value of the bypass capacitance, and examines techniques for introducing high dielectric constant materials into the semiconductor pmcesing of the substrates. In parhcular, the paper explores the possibility of depositing thin layers of amorphous Ban03 at low temp" to form a reliable, pin-hole fm. dielectric for bypass capacitance by use of ionized cluster beam techniques. Deposition of the amorphous mataial on both metal and semiconductor substates is possible.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.