Spansion's facility in Austin, Texas USA has proactively been updating the older Al technology fab with state-ofthe-art control systems, as driven by rapid response to exposed Cu experiences from the latest in Cu technology. This paper discuss the positive and negative in-line and material observations with processing Cu in open cassettes; the manufacturing operations queue time affects; along with process/tool experiments and factory windowing performed to address systematic yield loss issues. The results support the requirements to protect the exposed Cu from the atmospheric environment and to encapsulate the polished Cu in dielectric as rapidly as possible.Additionally, the results suggest that common fab gaseous chemical elements and molecules containing Sulfur (S), Chlorine (Cl 2 ) and organics (CH x ) from a variety of typical fab and external sources have significant impacts on the exposed Cu after the damascene oxide etch, Cu seed, Cu ECD plating and Cu CMP operations. Recommendations are suggested to quantify, control and measure the fab atmospheric contaminates on exposed copper to maximize fab and wafer yields while improving the Cu BEOL integrated reliability.
Hole mobility is significantly higher for silicon MOSFETs with channels along a <110> direction on the (110) plane than the usual (100) plane. Formation of (110) PMOS and (100) NMOS transistors is possible through use of Dual Substrate Orientation (DSO) integration. This paper describes a CMOS integration scheme to achieve bulk (110) PMOS and SOI (100) NMOS devices on the same substrate. Transistor results indicate a 130% improvement in PMOS I d,lin and 90% enhancement in I d,sat for long channel devices. Hole mobility and drive current anisotropy along the <110> and <100> channels on (110) plane was observed. There was no gate leakage or sub-threshold slope degradation indicating that the DSO integration results in high quality Si/SiON dielectric interfaces. PMOS enhancement from compressive channel stress is additive to that of orientation and compatible with the DSO integration.
An ion assisted deposition technique, called Reactive Partially Ionized Beam (RPIB) deposition, was used to prepare amorphous BaxTi2-xOy thin films at a low substrate temperature (<60°C). The stoichiometry of the films varied from ×=l.0 for BaTiO3 to ×=0.2 for Ti-rich films. The optical, thermal, and broadband electrical properties of this class of thin film dielectrics were systematically studied. A lμm BaxTi2-xOy film is optically transparent with a band gap of 4.6eV. Both transmittance and bandgap decrease when the films are increasingly enriched with Ti. The Ti rich films remain amorphous at 600°C while the stoichiometric BaTiO3 crystallizes into the perovskite structure. Annealed Ti rich films are thermally stable (>700°C) with low leakage (<0.lμ/cm2 at 0.5MV/cm) and moderately high dielectric constant (εr = 15-35). Polycrystalline BaTiO 3 deposited at 600°C on a Pt/Ta/SiO2/Si substrate has an εr = 400. Capacitor structures with various metallizations were used to evaluate the dielectric properties, such as breakdown strength, leakage, εr and tanδ from DC to 600MHz. A generic test vehicle was designed and fabricated to extend the frequency domain characterization of the dielectrics up to 40GHz. No dispersion of εr was observed in this frequency range for amorphous BaxTi2-xOy.
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