1998
DOI: 10.1023/a:1004484915386
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Discrete β-Ta2O5 crystallite formation in reactively sputtered amorphous thin films

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Cited by 8 publications
(6 citation statements)
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“…This observation of the lack of crystallinity is consistent across all O levels, including stoichiometric Ta 2 O 5 , indicating that the presence of O suppresses crystallization in these films. For the limiting case of stoichiometric Ta 2 O 5 , these findings are in agreement with previous reports that either high substrate temperatures ( 450 • C) or post-deposition annealing above ∼600-900 • C is required for crystallization of sputter-deposited Ta 2 O 5 films [12,[16][17][18]. The present work shows that crystallinity is not observed even for substoichiometric TaO x films with O content down to at least 46 at.%, likely as a result of the low substrate temperature during deposition.…”
Section: Resultssupporting
confidence: 92%
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“…This observation of the lack of crystallinity is consistent across all O levels, including stoichiometric Ta 2 O 5 , indicating that the presence of O suppresses crystallization in these films. For the limiting case of stoichiometric Ta 2 O 5 , these findings are in agreement with previous reports that either high substrate temperatures ( 450 • C) or post-deposition annealing above ∼600-900 • C is required for crystallization of sputter-deposited Ta 2 O 5 films [12,[16][17][18]. The present work shows that crystallinity is not observed even for substoichiometric TaO x films with O content down to at least 46 at.%, likely as a result of the low substrate temperature during deposition.…”
Section: Resultssupporting
confidence: 92%
“…Tantalum oxides are, therefore, attractive candidates as alternative hohlraum materials due to their tunable electrical resistivity and good oxidation and corrosion resistance. Prior work on the Ta-O system has mostly focused on stoichiometric Ta 2 O 5 films [10][11][12] or else films with oxygen content in the range of 0-60 at.% [13,14]. Films with composition corresponding to the transition from metallic conduction to insulating behavior remain comparatively unexplored.…”
Section: Introductionmentioning
confidence: 99%
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“…% Ta can be evidenced from the observation of peaks appearing at 27.4°, 54.3°, and 56.6°, corresponding to the (110), (211), and (220) crystal planes, respectively. The limited crystallinity concerning Ta 2 O 5 is in good agreement with previous reports, where partial crystallization could be obtained below 500 °C or up to 600 °C . Partial crystallization of Ta 2 O 5 can be observed from Figure S9, with the presence of (200) and (221) planes at 32.7° and the (200) plane from TaO suboxide at 31.8° (ICDD: 04-007-0866).…”
Section: Resultssupporting
confidence: 91%
“…The limited crystallinity concerning Ta 2 O 5 is in good agreement with previous reports, where partial crystallization could be obtained below 500 °C45 or up to 600 °C. 46 Partial crystallization of Ta 2 O 5 can be observed from Figure S9, with the presence of (200) and (221) planes at 32.7°and the (200) plane from TaO suboxide at 31.8°( ICDD: 04-007-0866).…”
Section: ■ Results and Discussionmentioning
confidence: 99%