There is an increasing interest in using graphene1,2 for optoelectronic applications.3−19 However, because graphene is an inherently weak optical absorber (only ≈2.3% absorption), novel concepts need to be developed to increase the absorption and take full advantage of its unique optical properties. We demonstrate that by monolithically integrating graphene with a Fabry-Pérot microcavity, the optical absorption is 26-fold enhanced, reaching values >60%. We present a graphene-based microcavity photodetector with responsivity of 21 mA/W. Our approach can be applied to a variety of other graphene devices, such as electro-absorption modulators, variable optical attenuators, or light emitters, and provides a new route to graphene photonics with the potential for applications in communications, security, sensing and spectroscopy.

The increasing demand of rapid sensing and diagnosis in remote areas requires the development of compact and cost-effective mid-infrared sensing devices. So far, all miniaturization concepts have been demonstrated with discrete optical components. Here we present a monolithically integrated sensor based on mid-infrared absorption spectroscopy. A bi-functional quantum cascade laser/detector is used, where, by changing the applied bias, the device switches between laser and detector operation. The interaction with chemicals in a liquid is resolved via a dielectric-loaded surface plasmon polariton waveguide. The thin dielectric layer enhances the confinement and enables efficient end-fire coupling from and to the laser and detector. The unamplified detector signal shows a slope of 1.8–7 μV per p.p.m., which demonstrates the capability to reach p.p.m. accuracy over a wide range of concentrations (0–60%). Without any hybrid integration or subwavelength patterning, our approach allows a straightforward and cost-saving fabrication.

Strange metal behavior is ubiquitous in correlated materials ranging from cuprate superconductors to bilayer graphene. There is increasing recognition that it arises from physics beyond the quantum fluctuations of a Landau order parameter which, in quantum critical heavy fermion antiferromagnets, may be realized as critical Kondo entanglement of spin and charge. The dynamics of the associated electronic delocalization transition could be ideally probed by optical conductivity, but experiments in the corresponding frequency and temperature ranges have remained elusive. We present terahertz time-domain transmission spectroscopy on molecular beam epitaxy-grown thin films of YbRh 2 Si 2 , a model strange metal compound. We observe frequency over temperature scaling of the optical conductivity as a hallmark of beyond-Landau quantum criticality. Our discovery implicates critical charge fluctuations as playing a central role in the strange metal behavior, thereby elucidating one of the longstanding mysteries of correlated quantum matter. arXiv:1808.02296v1 [cond-mat.str-el]

Double-barrier GaN resonant tunneling diodes with AlGaN barriers were fabricated on bulk (0001) single-crystal GaN substrates. Layers were grown using molecular-beam epitaxy with a rf plasma nitrogen source. Single diodes of 6μm diameter were prepared by inductively coupled plasma reactive ion etching. For many diodes clear negative differential resistance is observed around 2V with peak currents around 10kA∕cm2 and a peak-to-valley ratio of about 2 at room temperature. Its observation does not depend on specific conditions of measurement; however, it slowly decays after each measurement. The mechanism behind this decay is investigated since it is obviously prohibiting the usage of GaN resonant tunneling diodes so far. It is shown not to be caused by catastrophic breakdown of the devices.

We directly measure optical bound states in the continuum (BICs) by embedding a photodetector into a photonic crystal slab. The BICs observed in our experiment are the result of accidental phase matching between incident, reflected and in-plane waves at seemingly random wave vectors in the photonic band structure. Our measurements were confirmed through a rigorously coupled-wave analysis simulation in conjunction with temporal coupled mode theory. Polarization mixing between photonic crystal slab modes was observed and described using a plane wave expansion simulation. The ability to probe the field intensity inside the photonic crystal and thereby to directly measure BICs represents a milestone in the development of integrated opto-electronic devices based on BICs.

The authors investigate 2μm gate-length InAlN∕GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS HEMTs) with 12nm thick Al2O3 gate insulation. Compared to the Schottky barrier (SB) HEMT with similar design, the MOS HEMT exhibits a gate leakage reduction by six to ten orders of magnitude. A maximal drain current density (IDS=0.9A∕mm) and an extrinsic transconductance (gme=115mS∕mm) of the MOS HEMT also show improvements despite the threshold voltage shift. An analytical modeling shows that a higher mobility of electrons in the channel of the MOS HEMT and consequently a higher number of electrons attaining the velocity saturation may explain the observed increase in gme after the gate insulation.

The authors present the effects of the doping concentration on the performance of a set of terahertz quantum-cascade lasers emitting around 2.75THz. The chosen design is based on the longitudinal-optical-phonon depopulation of the lower laser state. An identical structure is regrown varying the sheet density from 5.4×109to1.9×1010cm−2. A linear dependency of the threshold current density on the doping is observed. The applied field where lasing takes place is independent of the doping. The field is responsible for the alignment of the cascades and therefore the transport of the electrons through the structure.

We increased the active region/waveguide thickness of terahertz quantum cascade lasers with semi-insulating surface plasmon waveguides by stacking two symmetric active regions on top of each other, via a direct wafer bonding technique. In this way, we enhance the generated optical power in the cavity and the mode confinement. We achieved 470 mW peak output power in pulsed mode from a single facet at a heat sink temperature of 5 K and a maximum operation temperature of 122 K. Furthermore, the devices show a broad band emission spectrum over a range of 420 GHz, centered around 3.9 THz.