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The impact of plasma hydrogenation on the subsequent formation of thermal donors at 450 °C in n-type oxygen-doped high-resistivity float-zone silicon is investigated by a combination of electrical and spectroscopic techniques. It is shown that the increase of the doping concentration can be explained by the creation of two sets of donors. The first one is the classical double oxygen thermal donors (OTDs), which are introduced with a nearly uniform concentration profile across the sample thickness, while the second type of donors is shallower and most likely hydrogen related. The latter show a pronounced concentration profile towards the surface and they form and disappear at a much faster rate than the OTDs at 450 °C.

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The limits of sensors in harsh environments are discussed. Failures of sensor materials, interconnects, and cables are shown. Remote measurements can be solutions to overcome material problems. Sensor material and measurement systems are presented for cases such as high temperature, high pressure, toxicity, explosiveness, nuclear radiation, and high electromagnetic pulse (EMP) levels.

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