ABSTR ACTTWO different integration schemes for front-end optical receivers have been demonstrated for GaAs and InP-based material systems. An InP-based PIN-FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g, = 450mS/mm and f~ = 9GHz. The GaAs-based planar structure consists of a modulated barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200 and the FET performance is characterized by g, = 250mS/mm, fT = 12GHz and fmaz = 21GHz.
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