Monolithically integrated GaAs-based and InP-based front-end photoreceivers

Abstract

ABSTR ACTTWO different integration schemes for front-end optical receivers have been demonstrated for GaAs and InP-based material systems. An InP-based PIN-FET vertically integrated circuit exhibits a bandwidth greater than 2 GHz. The FET exhibits an extrinsic g, = 450mS/mm and f~ = 9GHz. The GaAs-based planar structure consists of a modulated barrier photodiode and a doped channel FET made with the same epitaxial layers. The detector has an optical gain of 200 and the FET performance is characterized by g, = 250mS/mm, fT = 12GHz and fmaz = 21GHz.

An interdigitated diffusion-based In 0.53 Ga 0.47 As lateral PIN photodiode

“…The LPP is also more attractive because it simplifies the problem of interconnection of components especially in monolithic integration and has lower parasitic capacitance compared to the vertical structure 3 .…”

Concentration‐dependent minority carrier lifetime in an In0.53Ga0.47As interdigitated lateral PIN photodiode model based on spin‐on chemical fabrication methodology

“…In terms of fabrication, the doped wells of a vertical PIN PD (VPD) structure is developed using epitaxial methods whereas in the lateral PIN PD (LPP) structure, the doped p+/n+ wells can be fabricated easily using standard complementary metal‐oxide semiconductor fabrication techniques such as diffusion or ion implantation. The LPP is also attractive because it simplifies the problem of interconnection of components especially in monolithic integration and has lower parasitic capacitance compared to the vertical structure 3. Furthermore, an interdigitated electrode structure increases the optical absorption via the device surface while maintaining a low device capacitance.…”