Electron field emission from a patterned diamond-like carbon flat thin film using a Ti interfacial layer A 300-nm-thick diamondlike carbon ͑DLC͒ film was deposited on to a heavily doped n-type Si ͑111͒ wafer by filtered arc deposition. A flat thin film cylindrical emitter array was then fabricated by reactive-ion etching the DLC film. Its electron field emission properties were studied using a simple diode structure. A field emission current of 0.1 A was detected under an electric field of 5.2 V/m. As large as 64.1 mA/cm 2 of field emission current density was achieved after an activation process under a 39 V/m field. An image formed on the anode screen showed that electron field emission from the DLC flat emitter array is rather uniform. The field emission behavior is also consistent with Fowler-Nordheim theory. Hydrogen plasma surface treatments were found to enhance the field emission properties.
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