Electron field emission from a patterned diamondlike carbon flat cathode

Mao, D. S.; Zhao, Jun; Li, W.; Ren, Chao; Wang, X.; Liu, X. H.; Zhou, Junxia; Fan, Zhengxiu; Zhu, Yan; Li, Q.; Xu, Jiawei

doi:10.1116/1.590556

Cited by 9 publications

(2 citation statements)

References 14 publications

(10 reference statements)

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“…6 The plasma produced by the vacuum cathodic arc were focused to pass through a curved magnetic field of a solenoid, to filter out all the neutral atoms and microparticles before deposition. A zinc target with purity of 99.99% was cleaned in acetone and alcohol ultrasonic baths, respectively, before it was fixed into the system.…”

Section: Methodsmentioning

confidence: 99%

ZnO:Zn phosphor thin films prepared by filtered arc deposition

Mao

Zhang

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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ZnO:Zn phosphor thin films, which can be used in field emission displays, were prepared by filtered arc deposition. Depositing parameters, including bias and temperature of the substrates, duct current and partial pressure of O 2 in the depositing chamber, were varied to synthesize the films. Both dc and rf bias were utilized in the process. The structure, thickness, luminescent intensity, and morphology of the films were investigated. Most of the as-deposited films contained both crystalline and amorphous phases. It was found that lower bias, lower substrate temperature, rf bias, and lower duct current tended to obtain thicker films. Neither lower nor higher O 2 concentration in the chamber obtained thicker films. There are two categories of luminescent peaks, the UV/violet emission ͑370-420 nm͒ and the blue/green light ͑470-530 nm͒, in the deposited ZnO:Zn films. An interesting relation between PL intensity and morphology was found. Some samples with a special type of individual tip-like structures showed stronger luminescence in a magnitude than others. The forming of the tip structures may be due to the bombarding effect of the plasma with high energy during the deposition and that there were less boundaries or defects between the individual tips may account for the stronger luminescence.

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Section: Methodsmentioning

confidence: 99%

ZnO:Zn phosphor thin films prepared by filtered arc deposition

Mao

Zhang

et al. 2001

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Recently, some researchers have found that the crater region on diamond and DLC films created by a vacuum-arc discharge during field emission showed good emission properties. 4,5 When a critical electric field is reached, electrons impinging onto the anode produce ions that, in turn, are accelerated toward the cathode. The cathode material evaporates and is ionized by the electrons in front of the cathode, which then gives rise to an arc.…”

Section: Introductionmentioning

confidence: 99%

Electron field emission from a patterned diamond-like carbon flat thin film using a Ti interfacial layer

Mao¹,

Wang²,

Li³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Noise characteristics of emission current from conductive diamond-like carbon thin films coating on cone shaped silicon field emitters Electron field emission from a patterned diamondlike carbon flat cathode A 200-nm-thick diamond-like carbon film was prepared on Ti-deposited Si (Ͻ0.01 ⍀ cm͒ using a filtered arc deposition technique. Field-emission properties of it are enhanced as compared to films deposited on Si, showing an increased current and emission site density (ϳ1.2ϫ10 3 /cm 2 ). A patterned diamond-like carbon flat thin film on Ti-deposited Si fabricated by the oxygen reactive ion-beam etching technique shows further enhanced field-emission properties. An emission site density of 3ϫ10 3 /cm 2 was obtained. Field emission could be observed at a field value as low as 2.1 V/m. It is shown that the low potential barrier at the interface and high local geometric electric field enhancement around the edges produced by reactive ion-beam etching are possible causes for the enhanced effects. It can also be explained by the Geis' metal-diamond-vacuum triple junction emission mechanism.

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Effect of interface layers on electron field emission properties of amorphous diamond films

Mao

Zhao

et al. 1999

Sci. China Ser. E-Technol. Sci.

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Electron field emission from a patterned diamondlike carbon flat cathode

Cited by 9 publications

References 14 publications

ZnO:Zn phosphor thin films prepared by filtered arc deposition

ZnO:Zn phosphor thin films prepared by filtered arc deposition

Electron field emission from a patterned diamond-like carbon flat thin film using a Ti interfacial layer

Effect of interface layers on electron field emission properties of amorphous diamond films

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