In 0.18 Ga 0.82 As/GaAs 1−y P y quantum wells grown on (n11) A GaAs substrates by molecular beam epitaxy Structural and optical characterization of InGaN/GaN multiple quantum wells grown by molecular beam epitaxy Larger critical thickness determined by photoluminescence measurements in pseudomorphic In 0.25 Ga 0.75 As/Al 0.32 Ga 0.68 As quantum well grown on (411)A GaAs substrates by molecular beam epitaxy
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