Interface and optical properties of InGaAsNSb∕GaAs quantum wells on GaAs (411) substrates by molecular beam epitaxy

Li, W.; Pei, C.; Torfi, A.; Moscicka, D.; Wang, W. I.

doi:10.1116/1.2748411

Cited by 2 publications

(1 citation statement)

References 16 publications

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“…The improved electrical property was contributed by more efficiently incorporated Be dopants due to the presence of surface step-edges for 2 off-axis tilted substrates. [18][19][20]30 The results are expected to be applicable in devices that incorporate GaAsSb in the active layer grown by MBE.…”

Section: Resultsmentioning

confidence: 90%

Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

Chou

Torfi

Wang

2013

Journal of Applied Physics

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GaAsSb alloys lattice-matched to InP substrate have been used in various electronic and optoelectronic applications due to their highly desirable band alignment for high-speed double heterojunction bipolar transistors. There is however an issue with GaAsSb alloys, composed approximately of 50% As and 50% Sb, lattice-matched to an InP substrate; it exhibits a miscibility gap, which is a significant problem for crystal growth. This paper addresses the effect of substrate tilting on the material properties of GaAsSb alloys closely lattice-matched to InP substrates by molecular beam epitaxy (MBE). InP(100) substrates tilted 0°off-(on-axis), 2°off-, 3°off-, and 4°off-axis were used for MBE growth, then the material qualities of GaAsSb epitaxial layers were compared using various techniques, including high resolution X-ray diffraction, photoluminescence (PL), Raman scattering, and transmission-line measurements (TLM). Substrate tilting improved the GaAsSb alloys with crystalline quality, shown by a narrower x-ray linewidth and enhanced optical quality as evidenced by a strong PL peak. The results of TLM show that the lowest sheet resistance was achieved at a 2° off-axis tilt. The results are expected to be applicable in devices that incorporate GaAsSb in the active layer grown by MBE.

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Section: Resultsmentioning

confidence: 90%

Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

Chou

Torfi

Wang

2013

Journal of Applied Physics

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View full text Add to dashboard Cite

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Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

Chou

Torfi

Pei

et al. 2016

Applied Physics Letters

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In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientation presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.

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Interface and optical properties of InGaAsNSb∕GaAs quantum wells on GaAs (411) substrates by molecular beam epitaxy

Cited by 2 publications

References 16 publications

Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

Improvement of GaAsSb alloys on InP grown by molecular beam epitaxy with substrate tilting

Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

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