This study extends our previous work on liquid-phase deposition (LPD) of dense, high-quality, silicon-dioxide (SiO 2) films deposited on Si and GaAs substrates from supersaturated, hexafluorosilicic-acid aqueous at near room temperature. Pretreatment to coat the substrate surface with hydroxyl groups was found to be necessary for rapid and high-quality growth. More recent work has extended the range of LPD SiO2 to plastic. The current paper studies optimal LPD pretreatment of a plastic (ARTON) substrate. It is shown that treating ARTON plastic, first, by exposure to oxygen plasma, second, by potassium manganese (KMnO4) etching, and finally, by H202 etching, provides the plastic surihce with rich OH-radical formation. The resulting SiO2/ARTON film is of good quality and reliability, Deposition rate is up to 659 A/h, and the refractive index is about 1.44 with growth at 40°C. A growth mechanism ibr LPD-SiO2 deposition on plastic is proposed.

Indium tin oxide (ITO) film was deposited on an ARTON plastic substrate using 80 W, direct current (DC) magnetron sputtering on an unheated substrate, then annealed at 150°C under either hydrogen or nitrogen gas for periods ranging from 2 h to 8 h. Film surface morphology, crystal size, crystal orientation, and visible region optical transparency were studied. The grain size was found to increase with increased annealing time. Grain size was larger under nitrogen ambience than under hydrogen ambience. Sheet resistance of as-deposited ITO films was 87Ω/sq, but with nitrogen ambient annealing at 150°C for 8 h, it declined to 65Ω/sq. Average ITO-film transmittance was 88% after an 8-h nitrogen-ambient annealing.

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In this investigation, the effect of the thickness in the flexible organic light-emitting diode (FOLED) is studied. The larger luminance and luminance efficiency, 1160 cd/m2 and 2.71 lm/W, can be obtained at NPB thickness of 45 nm with the Alq3 thickness of 35 nm. The luminance dramatically rises when the Alq3 thickness is 45 nm at bias voltage of 19 V. The highest luminance is up to 2190 cd/m2. The extreme characteristic of FOLED may be useful to an organic electrically pumped laser.