Based on the results obtained for C–N and Si–C–N films, a systematic investigation of reactive magnetron sputtering of hard quaternary Si–B–C–N materials has been carried out. The Si–B–C–N films were deposited on p-type Si(100) substrates by dc magnetron co-sputtering using a single C–Si–B target (at a fixed 20% boron fraction in the target erosion area) in nitrogen-argon gas mixtures. Elemental compositions of the films, their surface bonding structure and mechanical properties, together with their oxidation resistance in air, were controlled by the Si fraction (5–75%) in the magnetron target erosion area, the Ar fraction (0–75%) in the gas mixture, the rf induced negative substrate bias voltage (from a floating potential to −500V) and the substrate temperature (180–350°C). The total pressure and the discharge current on the magnetron target were held constant at 0.5Pa and 1A, respectively. The energy and flux of ions bombarding the growing films were determined on the basis of the discharge characteristics measured for the rf discharge dominating in the deposition zone. Mass spectroscopy was used to show composition of the total ion fluxes onto the substrate and to explain differences between sputtering of carbon, silicon and boron from a composed target in nitrogen-argon discharges. The films, typically 1.0–2.4μm thick, possessing a density around 2.4gcm−3, were found to be amorphous in nanostructure with a very smooth surface (Ra⩽0.8nm) and good adhesion to substrates at a low compressive stress (1.0–1.6GPa). They exhibited high hardness (up to 47GPa) and elastic recovery (up to 88%), and extremely high oxidation resistance in air at elevated temperatures (up to a 1350°C substrate limit).
To cite this version:DAbstract. The atmospheric pressure dielectric barrier discharge burning in nitrogen with small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, the substrate temperature during the deposition process was elevated up to values within the range 25 • C -150 • C in order to obtain hard SiO x -like thin films. The properties of the discharge were studied by means of optical emission spectroscopy and electrical measurements. The deposited films were characterised by Rutherford backscattering and elastic recoil detection methods, x-ray photoelectron spectroscopy, infrared spectroscopy measurements, ellipsometry and depth sensing indentation technique. It was found that the films properties depend significantly on substrate temperature at deposition. An increase of substrate temperature from 25 • C to 150 • C leads to an increase of film hardness from 0.4 GPa to 7 GPa and the film chemical composition changes from CH x Si y O z to SiO x H y . The films were transparent in visible range.
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